TY - JOUR
T1 - Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems
AU - Bulgadaev, S. A.
AU - Kusmartsev, F. V.
N1 - Funding Information:
The authors are thankful to A.A. Abrikosov, P. Littlewood and M. Parish for very useful information about their works. This Letter is supported by the RFBR grants 02-02-16403, and by ESF network AQDJJ, EPSRC grant GR/S05052/01, the Royal Society grant 2004/R4-EF and Ministry of Science (UK).
PY - 2005/7/4
Y1 - 2005/7/4
N2 - Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag2+δSe. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures.
AB - Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag2+δSe. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures.
UR - http://www.scopus.com/inward/record.url?scp=20644433741&partnerID=8YFLogxK
U2 - 10.1016/j.physleta.2005.04.096
DO - 10.1016/j.physleta.2005.04.096
M3 - Article
AN - SCOPUS:20644433741
SN - 0375-9601
VL - 342
SP - 188
EP - 195
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 1-2
ER -