TY - JOUR

T1 - Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems

AU - Bulgadaev, S. A.

AU - Kusmartsev, F. V.

N1 - Funding Information:
The authors are thankful to A.A. Abrikosov, P. Littlewood and M. Parish for very useful information about their works. This Letter is supported by the RFBR grants 02-02-16403, and by ESF network AQDJJ, EPSRC grant GR/S05052/01, the Royal Society grant 2004/R4-EF and Ministry of Science (UK).

PY - 2005/7/4

Y1 - 2005/7/4

N2 - Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag2+δSe. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures.

AB - Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag2+δSe. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures.

UR - http://www.scopus.com/inward/record.url?scp=20644433741&partnerID=8YFLogxK

U2 - 10.1016/j.physleta.2005.04.096

DO - 10.1016/j.physleta.2005.04.096

M3 - Article

AN - SCOPUS:20644433741

SN - 0375-9601

VL - 342

SP - 188

EP - 195

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 1-2

ER -