Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

Mohammed A. Majid; Ahmad A. Al-Jabr; Rami T. El Afandy; Hassan M. Oubei; Dalaver H. Anjum; Mohamed Shehata; Tien K. Ng; Boon S. Ooi

doi:10.1117/12.2511878

Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

Mohammed A. Majid, Ahmad A. Al-Jabr, Rami T. El Afandy, Hassan M. Oubei, Dalaver H. Anjum, Mohamed Shehata, Tien K. Ng, Boon S. Ooi

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ∼250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO₂ and 0.1μm-Si₃N₄) and annealed at a high temperature (700-1000^oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ∼46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.

Original language	British English
Title of host publication	Novel In-Plane Semiconductor Lasers XVIII
Editors	Peter M. Smowton, Alexey A. Belyanin
Publisher	SPIE
ISBN (Electronic)	9781510625204
DOIs	https://doi.org/10.1117/12.2511878
State	Published - 2019
Event	Novel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States Duration: 4 Feb 2019 → 7 Feb 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10939
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Novel In-Plane Semiconductor Lasers XVIII 2019
Country/Territory	United States
City	San Francisco
Period	4/02/19 → 7/02/19

Keywords

Cycle annealing
Dielectric stress
InGaP/InAlGaP
Quantum well intermixing
Visible lasers

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10.1117/12.2511878

Cite this

Majid, M. A., Al-Jabr, A. A., El Afandy, R. T., Oubei, H. M., Anjum, D. H., Shehata, M., Ng, T. K., & Ooi, B. S. (2019). Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature. In P. M. Smowton, & A. A. Belyanin (Eds.), Novel In-Plane Semiconductor Lasers XVIII Article 109390L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10939). SPIE. https://doi.org/10.1117/12.2511878

@inproceedings{8cea019e8eaa469d970c7cda4ab573cb,

title = "Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature",

abstract = "In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ∼250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ∼46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.",

keywords = "Cycle annealing, Dielectric stress, InGaP/InAlGaP, Quantum well intermixing, Visible lasers",

author = "Majid, {Mohammed A.} and Al-Jabr, {Ahmad A.} and {El Afandy}, {Rami T.} and Oubei, {Hassan M.} and Anjum, {Dalaver H.} and Mohamed Shehata and Ng, {Tien K.} and Ooi, {Boon S.}",

note = "Funding Information: The authors gratefully acknowledge the financial support from KACST Technology Innovation Center for Solid State Publisher Copyright: {\textcopyright} 2019 SPIE.; Novel In-Plane Semiconductor Lasers XVIII 2019 ; Conference date: 04-02-2019 Through 07-02-2019",

year = "2019",

doi = "10.1117/12.2511878",

language = "British English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Smowton, {Peter M.} and Belyanin, {Alexey A.}",

booktitle = "Novel In-Plane Semiconductor Lasers XVIII",

address = "United States",

}

Majid, MA, Al-Jabr, AA, El Afandy, RT, Oubei, HM, Anjum, DH, Shehata, M, Ng, TK & Ooi, BS 2019, Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature. in PM Smowton & AA Belyanin (eds), Novel In-Plane Semiconductor Lasers XVIII., 109390L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10939, SPIE, Novel In-Plane Semiconductor Lasers XVIII 2019, San Francisco, United States, 4/02/19. https://doi.org/10.1117/12.2511878

Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature. / Majid, Mohammed A.; Al-Jabr, Ahmad A.; El Afandy, Rami T. et al.
Novel In-Plane Semiconductor Lasers XVIII. ed. / Peter M. Smowton; Alexey A. Belyanin. SPIE, 2019. 109390L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10939).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

AU - Majid, Mohammed A.

AU - Al-Jabr, Ahmad A.

AU - El Afandy, Rami T.

AU - Oubei, Hassan M.

AU - Anjum, Dalaver H.

AU - Shehata, Mohamed

AU - Ng, Tien K.

AU - Ooi, Boon S.

PY - 2019

Y1 - 2019

N2 - In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ∼250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ∼46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.

AB - In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ∼250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ∼46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.

KW - Cycle annealing

KW - Dielectric stress

KW - InGaP/InAlGaP

KW - Quantum well intermixing

KW - Visible lasers

UR - http://www.scopus.com/inward/record.url?scp=85065674261&partnerID=8YFLogxK

U2 - 10.1117/12.2511878

DO - 10.1117/12.2511878

M3 - Conference contribution

AN - SCOPUS:85065674261

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Novel In-Plane Semiconductor Lasers XVIII

A2 - Smowton, Peter M.

A2 - Belyanin, Alexey A.

PB - SPIE

T2 - Novel In-Plane Semiconductor Lasers XVIII 2019

Y2 - 4 February 2019 through 7 February 2019

ER -

Majid MA, Al-Jabr AA, El Afandy RT, Oubei HM, Anjum DH, Shehata M et al. Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature. In Smowton PM, Belyanin AA, editors, Novel In-Plane Semiconductor Lasers XVIII. SPIE. 2019. 109390L. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2511878

Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

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