Abstract
KrF pulsed excimer laser-induced decomposition of the triethylamine alane [(C2H5)3NAlH3] precursor in the adsorbed phase is shown to allow projection patterned deposition of Al at room temperature. The deposited height increases linearly with the laser energy dose suggesting that the decomposition is photolytically driven. Mirrorlike Al films are deposited at rates up to about one Al monolayer per pulse which corresponds to rates up to 2 μm/min when photolyzing at 100 Hz. Al films with good adhesion and resistivities down to 7.5 μΩ cm (2.5 times bulk), were deposited on quartz, Al2O3, and GaAs substrates. The process has good spatial selectivity. Patterns with 1 μm resolution have been generated.
Original language | British English |
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Pages (from-to) | 2173-2175 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 18 |
DOIs | |
State | Published - 1993 |