Issues in emissivity of silicon

  • S. Abedrabbo
  • , J. C. Hensel
  • , O. H. Gokce
  • , F. M. Tong
  • , B. Sopori
  • , A. T. Fiory
  • , N. M. Ravindra

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20 μm are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.

Original languageBritish English
Pages (from-to)95-102
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume525
DOIs
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199816 Apr 1998

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