Issues in emissivity of silicon

S. Abedrabbo, J. C. Hensel, O. H. Gokce, F. M. Tong, B. Sopori, A. T. Fiory, N. M. Ravindra

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1-20 μm are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.

Original languageBritish English
Pages (from-to)95-102
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199816 Apr 1998


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