@inproceedings{455d99ee533140f784eb2107447fbe6d,
title = "Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment",
abstract = "This paper describes the design and development of a 6 kA/1.1 kV non-destructive testing system, which aims for short circuit testing of high-power IGBT modules. An ultra-low stray inductance of 37 nH is achieved in the implementation of the tester. An 100 MHz FPGA supervising unit enables 10 ns level control accuracy of the short-circuit duration, protection triggering, and acquisition of the electrical waveforms. Moreover, a protection circuit avoids explosions in case of failure, making the post-failure analysis possible. A case study has been carried out on an aged 1.7 kV IGBT power module. The case study shows the current and voltage waveforms during short-circuit, as well as the current mismatch among six inner sections, which demonstrate the capability and the effectiveness of the proposed setup in the short-circuit aspect reliability studies of MW-scale power modules.",
keywords = "Degradation, Insulated Gate Bipolar Transistor (IGBT), Non-destructive testing (NDT), Power module, Short-circuit",
author = "Rui Wu and Liudmila Smirnova and Francesco Iannuzzo and Huai Wang and Frede Blaabjerg",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",
year = "2014",
month = feb,
day = "24",
doi = "10.1109/IECON.2014.7048996",
language = "British English",
series = "IECON Proceedings (Industrial Electronics Conference)",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3367--3373",
booktitle = "IECON Proceedings (Industrial Electronics Conference)",
address = "United States",
}