Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

Dapeng Xu, Yutian Wang, Hui Yang, Lianxi Zheng, Jianbin Li, Lihong Duan, Ronghan Wu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Cubic GaN was grown on GaAs, (100) by low pressure metal organic chemical vapor deposition (MOCVD). X-ray diffraction, scanning electron microscope (SEM) and photoluminescence (PL) spectra were performed to characterize the quality of the GaN film. The PL spectra of cubic GaN thin films being thicker than 1.5 μm were reported. Triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.

Original languageBritish English
Pages (from-to)517-522
Number of pages6
JournalScience in China, Series A: Mathematics, Physics, Astronomy
Issue number5
StatePublished - May 1999


  • Cubic GaN
  • Hexagonal
  • X-ray diffraction


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