@inproceedings{e224d7d43a35450ab158ee537a7afdf7,
title = "Investigating the compatibility of Ruthenium Barrier with copper interconnects",
abstract = "Ruthenium is proposed as an alternative barrier material for copper interconnect at sub 30-nm line-width device technology because of its excellent barrier properties and the ability to directly plate copper. Ruthenium is a noble metal and does not oxidize readily, and presents challenges in terms of corrosion of copper lines in subsequent wet processing. Copper is electrochemically active to ruthenium and will show accelerated copper corrosion in a galvanic couple with ruthenium. In this paper we will examine the kinetics of galvanic corrosion of copper using in-situ AFM analysis and demonstrate that through chemistry optimization, galvanic corrosion can be minimized.",
author = "Dnyanesh Tamboli and {Oriol Oss{\'o}}, J. and Todd McEvoy and Vega, {Lourdes F.} and Madhukar Rao and Gautam Banerjee",
year = "2010",
doi = "10.1149/1.3489059",
language = "British English",
isbn = "9781607681793",
series = "ECS Transactions",
number = "10",
pages = "181--187",
booktitle = "Chemical Mechanical Polishing 11",
edition = "10",
note = "Chemical Mechanical Polishing 11 - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",
}