Investigating the compatibility of Ruthenium Barrier with copper interconnects

Dnyanesh Tamboli, J. Oriol Ossó, Todd McEvoy, Lourdes F. Vega, Madhukar Rao, Gautam Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

Ruthenium is proposed as an alternative barrier material for copper interconnect at sub 30-nm line-width device technology because of its excellent barrier properties and the ability to directly plate copper. Ruthenium is a noble metal and does not oxidize readily, and presents challenges in terms of corrosion of copper lines in subsequent wet processing. Copper is electrochemically active to ruthenium and will show accelerated copper corrosion in a galvanic couple with ruthenium. In this paper we will examine the kinetics of galvanic corrosion of copper using in-situ AFM analysis and demonstrate that through chemistry optimization, galvanic corrosion can be minimized.

Original languageBritish English
Title of host publicationChemical Mechanical Polishing 11
Pages181-187
Number of pages7
Edition10
ISBN (Electronic)9781566778299
DOIs
StatePublished - 2010
EventChemical Mechanical Polishing 11 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 10 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number10
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChemical Mechanical Polishing 11 - 218th ECS Meeting
Country/TerritoryUnited States
CityLas Vegas, NV
Period10/10/1015/10/10

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