@inbook{4b7d18b7eba54982b9596a4c35f23ce0,

title = "Inverse problems for semiconductors: models and methods",

abstract = "The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].",

author = "A. Leit{\~a}o and Markowich, {P. A.} and Zubelli, {J. P.}",

note = "Funding Information: A.L. acknowledges support from the Brazilian National Research Council CNPq, under project grants 305823/03-5 and 478099/04-5. P.A.M. acknowledges support from the Austrian National Science Foundation FWF through his Wittgenstein Award 2000. J.P.Z. acknowledges financial support from CNPq through grants 302161/2003-1 and 474085/2003-1. Publisher Copyright: {\textcopyright} 2007, Birkh{\"a}user Boston.",

year = "2007",

doi = "10.1007/978-0-8176-4554-0_6",

language = "British English",

series = "Modeling and Simulation in Science, Engineering and Technology",

number = "9780817644895",

pages = "117--149",

booktitle = "Modeling and Simulation in Science, Engineering and Technology",

edition = "9780817644895",

}