Interfacial reactions and mechanism of C54 TiSi2 phase formation enhanced by multi-thermal-shock method

S. Li, H. S. Park, C. Q. Sun, S. Widjaja, K. Liao

Research output: Contribution to journalArticlepeer-review

Abstract

It has been demonstrated that C54 TiSi2 phase formation can be significantly enhanced by multi-thermal-shock (MTS) method. In this work, the enhancement mechanism of C54 phase formation and the interfacial reactions between TiSi2 and Si were investigated. The results indicate that the semi-coherent interface between TiSi2 C49 phase and Si substrate may be responsible for the rough surface of the TiSi2/Si structure. However, the semi-coherent interface can be completely destroyed by multi-thermal-shock method, resulting in the smooth surface of the structure. It is believed that the multi-thermal-shock method induces numerous defects to increase the internal energy in the C49 phase, thus enhancing the C54 phase formation significantly.

Original languageBritish English
Pages (from-to)132-136
Number of pages5
JournalThin Solid Films
Volume462-463
Issue numberSPEC. ISS.
DOIs
StatePublished - Sep 2004

Keywords

  • C54
  • Multi-thermal-shock
  • Si

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