Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

Boncheol Ku; Yawar Abbas; Andrey Sergeevich Sokolov; Changhwan Choi

doi:10.1016/j.jallcom.2017.11.267

Interface engineering of ALD HfO₂-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

Boncheol Ku, Yawar Abbas, Andrey Sergeevich Sokolov, Changhwan Choi

Hanyang University

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

The improved resistive switching (RS) characteristics of Pt/HfO₂/Ti structured RRAM are demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma treatment was intentionally carried out on the surface of atomic layer deposited (ALD) HfO₂ thin films to modulate the conducting filament size affecting RS behaviors. Compared to ALD HfO₂ RRAM without Ar plasma treatment, the Ar plasma treatment on the surface of ALD HfO₂ thin film leads to forming-free process, faster switching speed, tighter low resistance state (LRS) and high resistance state (HRS) current distribution, smaller variations of SET voltage and RESET voltage, and enhanced retention/endurance characteristics under HRS. These improvements are believed to be the generation of favorably modulated interface oxide layer between HfO₂ and Ti. In addition, current conduction mechanism is dominated by ohmic behavior in LRS while ohmic, space charge limited conduction (SCLC), and trap filled SCLC are observed at HRS with different field regions. The Ar plasma irradiation can be an easy and facile way to achieve the reliable and uniform RRAM characteristics.

Original language	British English
Pages (from-to)	1181-1188
Number of pages	8
Journal	Journal of Alloys and Compounds
Volume	735
DOIs	https://doi.org/10.1016/j.jallcom.2017.11.267
State	Published - 25 Feb 2018

Keywords

ALD HfO
Plasma treatment
Reram
Surface modification

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10.1016/j.jallcom.2017.11.267

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title = "Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors",

abstract = "The improved resistive switching (RS) characteristics of Pt/HfO2/Ti structured RRAM are demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma treatment was intentionally carried out on the surface of atomic layer deposited (ALD) HfO2 thin films to modulate the conducting filament size affecting RS behaviors. Compared to ALD HfO2 RRAM without Ar plasma treatment, the Ar plasma treatment on the surface of ALD HfO2 thin film leads to forming-free process, faster switching speed, tighter low resistance state (LRS) and high resistance state (HRS) current distribution, smaller variations of SET voltage and RESET voltage, and enhanced retention/endurance characteristics under HRS. These improvements are believed to be the generation of favorably modulated interface oxide layer between HfO2 and Ti. In addition, current conduction mechanism is dominated by ohmic behavior in LRS while ohmic, space charge limited conduction (SCLC), and trap filled SCLC are observed at HRS with different field regions. The Ar plasma irradiation can be an easy and facile way to achieve the reliable and uniform RRAM characteristics.",

keywords = "ALD HfO, Plasma treatment, Reram, Surface modification",

author = "Boncheol Ku and Yawar Abbas and Sokolov, {Andrey Sergeevich} and Changhwan Choi",

note = "Funding Information: This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning ( NRF-2016M3A7B4910426 ). Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

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doi = "10.1016/j.jallcom.2017.11.267",

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AU - Ku, Boncheol

AU - Abbas, Yawar

AU - Sokolov, Andrey Sergeevich

AU - Choi, Changhwan

N1 - Funding Information: This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of science, ICT & Future Planning ( NRF-2016M3A7B4910426 ). Publisher Copyright: © 2017 Elsevier B.V.

PY - 2018/2/25

Y1 - 2018/2/25

N2 - The improved resistive switching (RS) characteristics of Pt/HfO2/Ti structured RRAM are demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma treatment was intentionally carried out on the surface of atomic layer deposited (ALD) HfO2 thin films to modulate the conducting filament size affecting RS behaviors. Compared to ALD HfO2 RRAM without Ar plasma treatment, the Ar plasma treatment on the surface of ALD HfO2 thin film leads to forming-free process, faster switching speed, tighter low resistance state (LRS) and high resistance state (HRS) current distribution, smaller variations of SET voltage and RESET voltage, and enhanced retention/endurance characteristics under HRS. These improvements are believed to be the generation of favorably modulated interface oxide layer between HfO2 and Ti. In addition, current conduction mechanism is dominated by ohmic behavior in LRS while ohmic, space charge limited conduction (SCLC), and trap filled SCLC are observed at HRS with different field regions. The Ar plasma irradiation can be an easy and facile way to achieve the reliable and uniform RRAM characteristics.

AB - The improved resistive switching (RS) characteristics of Pt/HfO2/Ti structured RRAM are demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma treatment was intentionally carried out on the surface of atomic layer deposited (ALD) HfO2 thin films to modulate the conducting filament size affecting RS behaviors. Compared to ALD HfO2 RRAM without Ar plasma treatment, the Ar plasma treatment on the surface of ALD HfO2 thin film leads to forming-free process, faster switching speed, tighter low resistance state (LRS) and high resistance state (HRS) current distribution, smaller variations of SET voltage and RESET voltage, and enhanced retention/endurance characteristics under HRS. These improvements are believed to be the generation of favorably modulated interface oxide layer between HfO2 and Ti. In addition, current conduction mechanism is dominated by ohmic behavior in LRS while ohmic, space charge limited conduction (SCLC), and trap filled SCLC are observed at HRS with different field regions. The Ar plasma irradiation can be an easy and facile way to achieve the reliable and uniform RRAM characteristics.

KW - ALD HfO

KW - Plasma treatment

KW - Reram

KW - Surface modification

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Interface engineering of ALD HfO₂-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

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