Abstract
ZnO based semiconductors have emerged as promising materials for energetic photon detection. Aimed to improve photon detection efficiency, we have successfully grown ZnO nanowires based on vapor-liquid-solid approach. In this paper, we examine the influence of oxygen partial pressure on the quality ZnO nanowires. Optical properties of the nanowires grown under different oxygen environment were characterized, and we found that low oxygen partial pressure can result in large concentration of defect states, as reflected by increased visible emission and an elevated threshold for stimulated emission.
| Original language | British English |
|---|---|
| Article number | MM3.2 |
| Pages (from-to) | 193-197 |
| Number of pages | 5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 850 |
| State | Published - 2005 |
| Event | 2004 MRS Fall Meeting - Boston, MA, United States Duration: 30 Nov 2004 → 1 Dec 2004 |
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