Influence of oxygen partial pressure on the quality of nanowires for energetic photon detection applications

Y. Zhang, S. S. Mao

Research output: Contribution to journalConference articlepeer-review

Abstract

ZnO based semiconductors have emerged as promising materials for energetic photon detection. Aimed to improve photon detection efficiency, we have successfully grown ZnO nanowires based on vapor-liquid-solid approach. In this paper, we examine the influence of oxygen partial pressure on the quality ZnO nanowires. Optical properties of the nanowires grown under different oxygen environment were characterized, and we found that low oxygen partial pressure can result in large concentration of defect states, as reflected by increased visible emission and an elevated threshold for stimulated emission.

Original languageBritish English
Article numberMM3.2
Pages (from-to)193-197
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume850
StatePublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 30 Nov 20041 Dec 2004

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