Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures

R. Woscholski, S. Gies, M. Wiemer, M. K. Shakfa, A. Rahimi-Iman, P. Ludewig, S. Reinhard, K. Jandieri, S. D. Baranovskii, W. Heimbrodt, K. Volz, W. Stolz, M. Koch

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7 Scopus citations

Abstract

We have studied the optical properties of Ga(NAsP)-heterostructures, which were systematically grown at different temperatures by means of continuous-wave and time-resolved photoluminescence. We show that both the long ranged and the short ranged disorder scales increase for higher growth temperatures. Furthermore, samples with a higher disorder not only emit less photoluminescence (PL) intensity but also exhibit a longer effective PL decay time.

Original languageBritish English
Article number145707
JournalJournal of Applied Physics
Volume119
Issue number14
DOIs
StatePublished - 14 Apr 2016

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