Abstract
The influence of the texture of polycrystalline CVD diamond films on their electrical properties was studied. The films were deposited by a microwave-plasma-enhanced chemical vapour deposition technique (MPCVD). (110) and (100) textured films, and non-textured films were produced under different growth conditions. Extensive measurements were carried out in order to probe the electrical properties of the films: resistivity, carrier lifetimes, mobility and carrier drift length before trapping. The influence of nitrogen impurities on the film electrical properties is addressed. CVD diamond detectors were characterised electrically in photo-current mode at room temperature under X-ray radiation at 40 keV. The results give evidence of a strong influence of the texture, nitrogen impurities and polycrystalline structural defects of the films on their use as X-ray detectors.
| Original language | British English |
|---|---|
| Pages (from-to) | 107-111 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 380 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - 1 Oct 1996 |
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