Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process

M. Beres; K. M. Yu; J. Syzdek; S. S. Mao

doi:10.1016/j.tsf.2016.04.019

Improvement in the electronic quality of pulsed laser deposited CuIn_0.7Ga_0.3Se₂ thin films via post-deposition elemental sulfur annealing process

M. Beres, K. M. Yu, J. Syzdek, S. S. Mao

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We synthesized CuIn_0.7Ga_0.3Se₂ thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ∼ 5 Ω·cm suitable for photovoltaic applications.

Original language	British English
Pages (from-to)	50-56
Number of pages	7
Journal	Thin Solid Films
Volume	608
DOIs	https://doi.org/10.1016/j.tsf.2016.04.019
State	Published - 1 Jun 2016

Keywords

Cu(In,Ga)(Se,S) absorber
Elemental sulfur annealing
Hall effect
Pulsed laser deposition
Raman spectroscopy
Rutherford backscattering

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10.1016/j.tsf.2016.04.019

Cite this

@article{d5e837347eb145fc9d8f9b7455cc7493,

title = "Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process",

abstract = "We synthesized CuIn0.7Ga0.3Se2 thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ∼ 5 Ω·cm suitable for photovoltaic applications.",

keywords = "Cu(In,Ga)(Se,S) absorber, Elemental sulfur annealing, Hall effect, Pulsed laser deposition, Raman spectroscopy, Rutherford backscattering",

author = "M. Beres and Yu, {K. M.} and J. Syzdek and Mao, {S. S.}",

note = "Funding Information: M.B. was supported by the U.S. Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program. The RBS, SEM and electrical characterization were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 . Thanks to Robert Kostecki for his assistance with spatially-mapped Raman measurements; to Oscar D. Dubon and Jose J. Fonseca for their assistance with supporting Raman measurements of vacuum annealed samples; and to J. Matthew Lucas for his assistance with KCN-etching of the samples. Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = jun,

day = "1",

doi = "10.1016/j.tsf.2016.04.019",

language = "British English",

volume = "608",

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T1 - Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process

AU - Beres, M.

AU - Yu, K. M.

AU - Syzdek, J.

AU - Mao, S. S.

N1 - Funding Information: M.B. was supported by the U.S. Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program. The RBS, SEM and electrical characterization were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 . Thanks to Robert Kostecki for his assistance with spatially-mapped Raman measurements; to Oscar D. Dubon and Jose J. Fonseca for their assistance with supporting Raman measurements of vacuum annealed samples; and to J. Matthew Lucas for his assistance with KCN-etching of the samples. Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - We synthesized CuIn0.7Ga0.3Se2 thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ∼ 5 Ω·cm suitable for photovoltaic applications.

AB - We synthesized CuIn0.7Ga0.3Se2 thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ∼ 5 Ω·cm suitable for photovoltaic applications.

KW - Cu(In,Ga)(Se,S) absorber

KW - Elemental sulfur annealing

KW - Hall effect

KW - Pulsed laser deposition

KW - Raman spectroscopy

KW - Rutherford backscattering

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