Impact of lifetime model selections on the reliability prediction of IGBT modules in modular multilevel converters

Yi Zhang, Huai Wang, Zhongxu Wang, Yongheng Yang, Frede Blaabjerg

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    67 Scopus citations

    Abstract

    Power cycling in semiconductor modules contributes to repetitive thermal-mechanical stresses, which in return accumulate as fatigue on the devices, and challenge the lifetime. Typically, lifetime models are expressed in number-of-cycles, within which the device can operate without failures under predefined conditions. In these lifetime models, thermal stresses (e.g., junction temperature variations) are commonly considered. However, the lifetime of power devices involves in cross-disciplinary knowledge. As a result, the lifetime prediction is affected by the selected lifetime model. In this regard, this paper benchmarks the most commonly-employed lifetime models of power semiconductor devices for offshore Modular Multilevel Converters (MMC) based wind farms. The benchmarking reveals that the lifetime model selection has a significant impact on the lifetime estimation. The use of analytical lifetime models should be justified in terms of applicability, limitations, and underlying statistical properties.

    Original languageBritish English
    Title of host publication2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages4202-4207
    Number of pages6
    ISBN (Electronic)9781509029983
    DOIs
    StatePublished - 3 Nov 2017
    Event9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States
    Duration: 1 Oct 20175 Oct 2017

    Publication series

    Name2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
    Volume2017-January

    Conference

    Conference9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
    Country/TerritoryUnited States
    CityCincinnati
    Period1/10/175/10/17

    Keywords

    • Insulated gate bipolar transistor (IGBT)
    • Lifetime model
    • Modular multilevel converter
    • Power semiconductor module
    • Reliability

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