Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

A. Useinov; Y. Saeed; N. Singh; N. Useinov; U. Schwingenschlögl

doi:10.1103/PhysRevB.88.060405

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La_0.67Sr_0.33MnO³ magnetic tunnel junctions

A. Useinov
, Y. Saeed
, N. Singh
, N. Useinov
, U. Schwingenschlögl

Physics

California State University, Northridge
King Abdullah University of Science and Technology
Kazan Federal University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La_0.67Sr_0.33MnO ³ tunnel junctions, where the electronic band structures of Fe and La_0.67Sr_0.33MnO³ are derived by ab initio calculations.

Original language	British English
Article number	060405
Journal	Physical Review B-Condensed Matter
Volume	88
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevB.88.060405
State	Published - 19 Aug 2013

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@article{52074857a6b8443380c2dfcd0b72a832,

title = "Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions",

abstract = "The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO 3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.",

author = "A. Useinov and Y. Saeed and N. Singh and N. Useinov and U. Schwingenschl{\"o}gl",

year = "2013",

month = aug,

day = "19",

doi = "10.1103/PhysRevB.88.060405",

language = "British English",

volume = "88",

number = "6",

}

TY - JOUR

T1 - Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

AU - Useinov, A.

AU - Saeed, Y.

AU - Singh, N.

AU - Useinov, N.

AU - Schwingenschlögl, U.

PY - 2013/8/19

Y1 - 2013/8/19

N2 - The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO 3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

AB - The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO 3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

UR - https://www.scopus.com/pages/publications/84883413768

U2 - 10.1103/PhysRevB.88.060405

DO - 10.1103/PhysRevB.88.060405

M3 - Article

AN - SCOPUS:84883413768

SN - 0163-1829

VL - 88

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 6

M1 - 060405

ER -

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La_0.67Sr_0.33MnO³ magnetic tunnel junctions

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