Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

Guangrui Xia, Hasan M. Nayfeh, Minjoo L. Lee, Eugene A. Fitzgerald, Dimitri A. Antoniadis, Dalaver H. Anjum, Jian Li, Robert Hull, Nancy Klymko, Judy L. Hoyt

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