Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- , Hasan M. Nayfeh
- , Minjoo L. Lee
- , Eugene A. Fitzgerald
- , Dimitri A. Antoniadis
- , Dalaver H. Anjum
- , Jian Li
- , Robert Hull
- , Nancy Klymko
- , Judy L. Hoyt
- Massachusetts Institute of Technology
- IBM Research
- University of Virginia
- IBM Microelectronics Division
Research output: Contribution to journal › Article › peer-review
23
Scopus
citations