Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

Guangrui Xia; Hasan M. Nayfeh; Minjoo L. Lee; Eugene A. Fitzgerald; Dimitri A. Antoniadis; Dalaver H. Anjum; Jian Li; Robert Hull; Nancy Klymko; Judy L. Hoyt

doi:10.1109/TED.2004.839116

Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

Guangrui Xia, Hasan M. Nayfeh, Minjoo L. Lee, Eugene A. Fitzgerald, Dimitri A. Antoniadis, Dalaver H. Anjum, Jian Li, Robert Hull, Nancy Klymko, Judy L. Hoyt

Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The impact of processing factors such as ion implantation and rapid thermal annealing on mobility enhancement in strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs)has been investigated. Long-channel strained-Si and bulk n-MOSFETs were fabricated with various channel-region implant doses and thermal budgets. Neutral Si and Ge species were used to study the impact of the implant damage on mobility separately from ionized impurity scattering effects. Electron mobility enhancement is shown to degrade considerably when the implant dose is above a critical dose for a given thermal budget. Transmission electron microscopy, secondary ion mass spectrometry and Raman spectroscopy were used to investigate the mobility degradation mechanisms. Residual implant damage and implant damage enhanced Ge up-diffusion into the Si are shown to be responsible for the mobility degradation. Two-dimensional damage simulations of 30-nm scale MOSFETs are used to examine potential technological implications of these findings.

Original language	British English
Pages (from-to)	2136-2144
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	12
DOIs	https://doi.org/10.1109/TED.2004.839116
State	Published - Dec 2004

Keywords

Electron mobility
Ge diffusion
Ion implantation damage
Rapid thermal anneal
Strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOS-FETs)

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@article{950746d18a9b42f9a24930905dae8ba3,

title = "Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs",

abstract = "The impact of processing factors such as ion implantation and rapid thermal annealing on mobility enhancement in strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs)has been investigated. Long-channel strained-Si and bulk n-MOSFETs were fabricated with various channel-region implant doses and thermal budgets. Neutral Si and Ge species were used to study the impact of the implant damage on mobility separately from ionized impurity scattering effects. Electron mobility enhancement is shown to degrade considerably when the implant dose is above a critical dose for a given thermal budget. Transmission electron microscopy, secondary ion mass spectrometry and Raman spectroscopy were used to investigate the mobility degradation mechanisms. Residual implant damage and implant damage enhanced Ge up-diffusion into the Si are shown to be responsible for the mobility degradation. Two-dimensional damage simulations of 30-nm scale MOSFETs are used to examine potential technological implications of these findings.",

keywords = "Electron mobility, Ge diffusion, Ion implantation damage, Rapid thermal anneal, Strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOS-FETs)",

author = "Guangrui Xia and Nayfeh, {Hasan M.} and Lee, {Minjoo L.} and Fitzgerald, {Eugene A.} and Antoniadis, {Dimitri A.} and Anjum, {Dalaver H.} and Jian Li and Robert Hull and Nancy Klymko and Hoyt, {Judy L.}",

note = "Funding Information: Manuscript received January 19, 2004; revised May 25, 2004. This work was supported by the Semiconductor Research Corporation under Grant 841.002. The review of this paper was arranged by Editor T. Skotnicki.",

year = "2004",

month = dec,

doi = "10.1109/TED.2004.839116",

language = "British English",

volume = "51",

pages = "2136--2144",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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T1 - Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

AU - Xia, Guangrui

AU - Nayfeh, Hasan M.

AU - Lee, Minjoo L.

AU - Fitzgerald, Eugene A.

AU - Antoniadis, Dimitri A.

AU - Anjum, Dalaver H.

AU - Li, Jian

AU - Hull, Robert

AU - Klymko, Nancy

AU - Hoyt, Judy L.

N1 - Funding Information: Manuscript received January 19, 2004; revised May 25, 2004. This work was supported by the Semiconductor Research Corporation under Grant 841.002. The review of this paper was arranged by Editor T. Skotnicki.

PY - 2004/12

Y1 - 2004/12

N2 - The impact of processing factors such as ion implantation and rapid thermal annealing on mobility enhancement in strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs)has been investigated. Long-channel strained-Si and bulk n-MOSFETs were fabricated with various channel-region implant doses and thermal budgets. Neutral Si and Ge species were used to study the impact of the implant damage on mobility separately from ionized impurity scattering effects. Electron mobility enhancement is shown to degrade considerably when the implant dose is above a critical dose for a given thermal budget. Transmission electron microscopy, secondary ion mass spectrometry and Raman spectroscopy were used to investigate the mobility degradation mechanisms. Residual implant damage and implant damage enhanced Ge up-diffusion into the Si are shown to be responsible for the mobility degradation. Two-dimensional damage simulations of 30-nm scale MOSFETs are used to examine potential technological implications of these findings.

AB - The impact of processing factors such as ion implantation and rapid thermal annealing on mobility enhancement in strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs)has been investigated. Long-channel strained-Si and bulk n-MOSFETs were fabricated with various channel-region implant doses and thermal budgets. Neutral Si and Ge species were used to study the impact of the implant damage on mobility separately from ionized impurity scattering effects. Electron mobility enhancement is shown to degrade considerably when the implant dose is above a critical dose for a given thermal budget. Transmission electron microscopy, secondary ion mass spectrometry and Raman spectroscopy were used to investigate the mobility degradation mechanisms. Residual implant damage and implant damage enhanced Ge up-diffusion into the Si are shown to be responsible for the mobility degradation. Two-dimensional damage simulations of 30-nm scale MOSFETs are used to examine potential technological implications of these findings.

KW - Electron mobility

KW - Ge diffusion

KW - Ion implantation damage

KW - Rapid thermal anneal

KW - Strained-Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOS-FETs)

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DO - 10.1109/TED.2004.839116

M3 - Article

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SN - 0018-9383

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SP - 2136

EP - 2144

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs

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