@inproceedings{263ccbe53d2f4c5592c254c101d4afa1,
title = "Identifying wafer fabrication defect signatures",
abstract = "We introduce a system called IDS for diagnosing semiconductor fabrication process. IDS can identify the carry-over defect that contributed to a defective cluster captured by an in-line inspection tool during a specific fabrication processing step. Let Rx be a defective cluster captured by an in-line inspection tool during the fabrication processing step psi. First, IDS would identify the defect type of Rx by comparing the image of Rx with the images in reference wafer maps of previous defect clusters captured at psi. Let dj be the identified defect type. IDS would use rules of inferences for identifying the root cause of dj. It will utilize dj as a trigger for the appropriate defect specification rules using the standard rules of inferences. By applying the defect specification rules recursively using the inference rules, IDS can identify the root cause of dj. We experimentally evaluated the quality of IDS. Results revealed marked prediction accuracy.",
keywords = "Semiconductor wafer fabrication, wafer defect",
author = "Kamal Taha",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Interconnect Technology Conference, IITC 2017 ; Conference date: 16-05-2017 Through 18-05-2017",
year = "2017",
month = jul,
day = "5",
doi = "10.1109/IITC-AMC.2017.7968985",
language = "British English",
series = "IITC 2017 - 2017 IEEE International Interconnect Technology Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "IITC 2017 - 2017 IEEE International Interconnect Technology Conference",
address = "United States",
}