Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Nicoleta Doriana Banu; Ionut Banu; Marios S. Katsiotis; Anjana Tharalekshmy; Samuel Stephen; Jamie Whelan; Gisha Elizabeth Luckachan; Radu Vladea; Saeed M. Alhassan

doi:10.1515/chempap-2016-0084

Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Nicoleta Doriana Banu, Ionut Banu, Marios S. Katsiotis, Anjana Tharalekshmy, Samuel Stephen, Jamie Whelan, Gisha Elizabeth Luckachan, Radu Vladea, Saeed M. Alhassan

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8 Scopus citations

Abstract

Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO₂/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO₂/SiO₂/SiC could be observed by Raman, XRD and HRTEM.

Original language	British English
Pages (from-to)	1503-1511
Number of pages	9
Journal	Chemical Papers
Volume	70
Issue number	11
DOIs	https://doi.org/10.1515/chempap-2016-0084
State	Published - 1 Nov 2016

Keywords

anatase
Raman spectroscopy
rutile
selective oxidation
TiC/SiC composite
X-ray diffraction

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10.1515/chempap-2016-0084

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title = "Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy",

abstract = "Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.",

keywords = "anatase, Raman spectroscopy, rutile, selective oxidation, TiC/SiC composite, X-ray diffraction",

author = "Banu, {Nicoleta Doriana} and Ionut Banu and Katsiotis, {Marios S.} and Anjana Tharalekshmy and Samuel Stephen and Jamie Whelan and Luckachan, {Gisha Elizabeth} and Radu Vladea and Alhassan, {Saeed M.}",

note = "Publisher Copyright: {\textcopyright} 2016 Institute of Chemistry, Slovak Academy of Sciences.",

year = "2016",

month = nov,

day = "1",

doi = "10.1515/chempap-2016-0084",

language = "British English",

volume = "70",

pages = "1503--1511",

journal = "Chemical Papers",

issn = "0366-6352",

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TY - JOUR

T1 - Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

AU - Banu, Nicoleta Doriana

AU - Banu, Ionut

AU - Katsiotis, Marios S.

AU - Tharalekshmy, Anjana

AU - Stephen, Samuel

AU - Whelan, Jamie

AU - Luckachan, Gisha Elizabeth

AU - Vladea, Radu

AU - Alhassan, Saeed M.

PY - 2016/11/1

Y1 - 2016/11/1

N2 - Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.

AB - Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO2/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO2/SiO2/SiC could be observed by Raman, XRD and HRTEM.

KW - anatase

KW - Raman spectroscopy

KW - rutile

KW - selective oxidation

KW - TiC/SiC composite

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84983284297&partnerID=8YFLogxK

U2 - 10.1515/chempap-2016-0084

DO - 10.1515/chempap-2016-0084

M3 - Article

AN - SCOPUS:84983284297

SN - 0366-6352

VL - 70

SP - 1503

EP - 1511

JO - Chemical Papers

JF - Chemical Papers

IS - 11

ER -

Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Abstract

Keywords

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