@inproceedings{f4a04f01ea08472b8023aa50ed45002d,
title = "Hybrid memristor-CMOS memory cell: Modeling and design",
abstract = "Memristor was realized as physical device recently by HP labs, this discovery spurred a great interest in memristors as a fundamental electronic element. Memristor-based technology provides much better scalability, higher utilization when used as memory, and overall lower energy consumptions compared to traditional CMOS technology. The contribution of this paper is a detailed study of the non-linear model of the Memristor. This modeling is used to recognize the time and the voltage characteristics of stable read and write operations, and the tradeoffs between the various design parameters such as voltage, frequency, noise margin, and area. Based on this modeling we propose a hybrid CMOS-Memristor memory cell and architecture that deliver the speed of an SRAM and the density of DRAM with no wasted leakage power in the storage.",
keywords = "emerging technology, low power memory, memristor, nano technology, non volatile memory",
author = "Baker Mohammad and Dirar Homouz and Rayahi, {Omar Al} and Hazem Elgabra and Hosani, {Ahmed Saleh Al}",
year = "2011",
doi = "10.1109/ICM.2011.6177388",
language = "British English",
isbn = "9781457722073",
series = "Proceedings of the International Conference on Microelectronics, ICM",
booktitle = "2011 International Conference on Microelectronics, ICM 2011",
note = "2011 23rd International Conference on Microelectronics, ICM 2011 ; Conference date: 19-12-2011 Through 22-12-2011",
}