High temperature simulation of 4H-SiC bipolar circuits

High speed and high-temperature operation capabilities are desirable features of integrated circuits. Due to their innate electrical and physical properties, silicon devices face significant hurdles at elevated temperatures, while silicon carbide devices perform remarkably well in such environments. This paper studies the performance of various high-speed 4H-SiC bipolar logic families including transistor-transistor logic, Schottky transistor-transistor logic, and emitter-coupled logic. All logic circuits have been optimized for high speed and high-temperature operations. Gate delays as low as 2.7 ns at room temperature and less than 5 ns at 500 °C have been achieved without sacrificing fan-out capability and noise margin stability.