High temperature simulation of 4H-SiC bipolar circuits

Hazem Elgabra, Shakti Singh

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

High speed and high-temperature operation capabilities are desirable features of integrated circuits. Due to their innate electrical and physical properties, silicon devices face significant hurdles at elevated temperatures, while silicon carbide devices perform remarkably well in such environments. This paper studies the performance of various high-speed 4H-SiC bipolar logic families including transistor-transistor logic, Schottky transistor-transistor logic, and emitter-coupled logic. All logic circuits have been optimized for high speed and high-temperature operations. Gate delays as low as 2.7 ns at room temperature and less than 5 ns at 500 °C have been achieved without sacrificing fan-out capability and noise margin stability.

Original languageBritish English
Article number7050233
Pages (from-to)302-305
Number of pages4
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number3
DOIs
StatePublished - 1 May 2015

Keywords

  • 4H-SiC
  • Bipolar Integrated Circuits
  • ECL
  • High Speed
  • High Temperature
  • Logic Family
  • STTL
  • TTL

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