TY - JOUR
T1 - High Reflectivity YDH/SiO2 Distributed Bragg Reflector for UV-C Wavelength Regime
AU - Alias, Mohd Sharizal
AU - Alatawi, Abdullah A.
AU - Chong, Wong Kim
AU - Tangi, Malleswararao
AU - Holguin-Lerma, Jorge A.
AU - Stegenburgs, Edgars
AU - Shakfa, Mohammad Khaled
AU - Ng, Tien Khee
AU - Albadri, Abdulrahman M.
AU - Alyamani, Ahmed Y.
AU - Ooi, Boon S.
N1 - Funding Information:
Manuscript received December 25, 2017; revised January 24, 2018; accepted February 6, 2018. Date of publication February 12, 2018; date of current version March 1, 2018. This paper is based on the work supported in part by the King Abdulaziz City for Science and Technology under Grant KACST TIC R2-FP-008, and in part by the King Abdullah University of Science and Technology baseline funding BAS/1/1614-01-01. Corresponding author: B. S. Ooi (e-mail: [email protected]).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/4
Y1 - 2018/4
N2 - A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ∼240 nm is fabricated using radio-frequency magnetron sputtering. Before the DBR deposition, optical properties for a single layer of YDH, SiO2, and HfO2 thin films were studied using spectroscopic ellipsometry and spectrophotometry. To investigate the performance of YDH as a material for the high refractive index layer in the DBR, a comparison of its optical properties was made with HfO2 thin films. Due to larger optical bandgap, the YDH thin films demonstrated higher transparency, lower extinction coefficient, and lower absorption coefficient in the UV-C regime (especially for wavelengths below 250 nm) compared to the HfO2 thin films. The fabricated YDH/SiO2 DBR consisting of 15 periods achieved a reflectivity higher than 99.9% at the wavelength of ∼240 nm with a stopband of ∼50 nm. The high reflectivity and broad stopband of YDH/SiO2 DBRs will enable further advancement of various photonic devices such as vertical-cavity surface-emitting lasers, resonant-cavity light-emitting diodes, and resonant-cavity photodetectors operating in the UV-C wavelength regime.
AB - A distributed Bragg reflector (DBR) composed of Y2O3-doped HfO2 (YDH)/SiO2 layers with high reflectivity spectrum centered at a wavelength of ∼240 nm is fabricated using radio-frequency magnetron sputtering. Before the DBR deposition, optical properties for a single layer of YDH, SiO2, and HfO2 thin films were studied using spectroscopic ellipsometry and spectrophotometry. To investigate the performance of YDH as a material for the high refractive index layer in the DBR, a comparison of its optical properties was made with HfO2 thin films. Due to larger optical bandgap, the YDH thin films demonstrated higher transparency, lower extinction coefficient, and lower absorption coefficient in the UV-C regime (especially for wavelengths below 250 nm) compared to the HfO2 thin films. The fabricated YDH/SiO2 DBR consisting of 15 periods achieved a reflectivity higher than 99.9% at the wavelength of ∼240 nm with a stopband of ∼50 nm. The high reflectivity and broad stopband of YDH/SiO2 DBRs will enable further advancement of various photonic devices such as vertical-cavity surface-emitting lasers, resonant-cavity light-emitting diodes, and resonant-cavity photodetectors operating in the UV-C wavelength regime.
KW - Distributed Bragg reflector
KW - thin films
KW - ultraviolet.
UR - http://www.scopus.com/inward/record.url?scp=85041838867&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2018.2804355
DO - 10.1109/JPHOT.2018.2804355
M3 - Article
AN - SCOPUS:85041838867
SN - 1943-0655
VL - 10
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 2
M1 - 2200508
ER -