High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

Abdullah A. Alatawi; Jorge A. Holguin-Lerma; Chao Shen; Mohammad Khaled Shakfa; Abdullah A. Alhamoud; Abdulrahman M. Albadri; Ahmed Y. Alyamani; Tien Khee Ng; Boon S. Ooi

doi:10.1109/ISLC.2018.8516200

High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

Abdullah A. Alatawi, Jorge A. Holguin-Lerma, Chao Shen, Mohammad Khaled Shakfa, Abdullah A. Alhamoud, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, Boon S. Ooi

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ∼2970 mW-nm.

Original language	British English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	129-130
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516200
State	Published - 30 Oct 2018
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: 16 Sep 2018 → 19 Sep 2018

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Conference

Conference	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	United States
City	Santa Fe
Period	16/09/18 → 19/09/18

Keywords

amplified spontaneous emission (ASE)
gallium nitride
laser diode
superluminescent diode (SLD)

Access to Document

10.1109/ISLC.2018.8516200

Cite this

Alatawi, A. A., Holguin-Lerma, J. A., Shen, C., Shakfa, M. K., Alhamoud, A. A., Albadri, A. M., Alyamani, A. Y., Ng, T. K., & Ooi, B. S. (2018). High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 129-130). Article 8516200 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516200

@inproceedings{626e5783d8ca42e9a932d61d82376366,

title = "High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW",

abstract = "We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ∼2970 mW-nm.",

keywords = "amplified spontaneous emission (ASE), gallium nitride, laser diode, superluminescent diode (SLD)",

author = "Alatawi, {Abdullah A.} and Holguin-Lerma, {Jorge A.} and Chao Shen and Shakfa, {Mohammad Khaled} and Alhamoud, {Abdullah A.} and Albadri, {Abdulrahman M.} and Alyamani, {Ahmed Y.} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516200",

language = "British English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "129--130",

booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",

address = "United States",

}

Alatawi, AA, Holguin-Lerma, JA, Shen, C, Shakfa, MK, Alhamoud, AA, Albadri, AM, Alyamani, AY, Ng, TK & Ooi, BS 2018, High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516200, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 129-130, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 16/09/18. https://doi.org/10.1109/ISLC.2018.8516200

High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW. / Alatawi, Abdullah A.; Holguin-Lerma, Jorge A.; Shen, Chao et al.
26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 129-130 8516200 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

AU - Alatawi, Abdullah A.

AU - Holguin-Lerma, Jorge A.

AU - Shen, Chao

AU - Shakfa, Mohammad Khaled

AU - Alhamoud, Abdullah A.

AU - Albadri, Abdulrahman M.

AU - Alyamani, Ahmed Y.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

PY - 2018/10/30

Y1 - 2018/10/30

N2 - We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ∼2970 mW-nm.

AB - We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ∼2970 mW-nm.

KW - amplified spontaneous emission (ASE)

KW - gallium nitride

KW - laser diode

KW - superluminescent diode (SLD)

UR - http://www.scopus.com/inward/record.url?scp=85057428276&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2018.8516200

DO - 10.1109/ISLC.2018.8516200

M3 - Conference contribution

AN - SCOPUS:85057428276

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 129

EP - 130

BT - 26th International Semiconductor Laser Conference, ISLC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Semiconductor Laser Conference, ISLC 2018

Y2 - 16 September 2018 through 19 September 2018

ER -

Alatawi AA, Holguin-Lerma JA, Shen C, Shakfa MK, Alhamoud AA, Albadri AM et al. High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 129-130. 8516200. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2018.8516200

High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

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