High performance graphene-silicon Schottky junction solar cells with HfO2 interfacial layer grown by atomic layer deposition

Aaesha Alnuaimi; Ibraheem Almansouri; Irfan Saadat; Ammar Nayfeh

doi:10.1016/j.solener.2018.02.020

High performance graphene-silicon Schottky junction solar cells with HfO₂ interfacial layer grown by atomic layer deposition

Aaesha Alnuaimi
, Ibraheem Almansouri
, Irfan Saadat
, Ammar Nayfeh

Electrical Engineering

Dubai Electricity and Water Authority (DEWA)

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Among the limiting factors that affect the performance of Graphene (Gr)/ Silicon (Si) Schottky barrier solar cells (SBSC) - are the high recombination at Gr/Si interface and the growth of undesirable native oxide that resulted in instability issue. In this work, hafnium oxide (HfO₂) grown by atomic layer deposition (ALD) has been investigated as an interfacial layer for Gr/Si Schottky junction solar cells. Engineering the interface with HfO₂ contributed to enhancing the power conversion efficiency remarkably from 3.9% to 9.1%. The obtained efficiency with HfO₂ interfacial layers grown by ALD is considered among the highest reported for Gr/Si SBSC using pristine graphene.

Original language	British English
Pages (from-to)	174-179
Number of pages	6
Journal	Solar Energy
Volume	164
DOIs	https://doi.org/10.1016/j.solener.2018.02.020
State	Published - Apr 2018

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Graphene
Hafnium oxide
Interface
Solar cell

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10.1016/j.solener.2018.02.020

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Cite this

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title = "High performance graphene-silicon Schottky junction solar cells with HfO2 interfacial layer grown by atomic layer deposition",

abstract = "Among the limiting factors that affect the performance of Graphene (Gr)/ Silicon (Si) Schottky barrier solar cells (SBSC) - are the high recombination at Gr/Si interface and the growth of undesirable native oxide that resulted in instability issue. In this work, hafnium oxide (HfO2) grown by atomic layer deposition (ALD) has been investigated as an interfacial layer for Gr/Si Schottky junction solar cells. Engineering the interface with HfO2 contributed to enhancing the power conversion efficiency remarkably from 3.9\% to 9.1\%. The obtained efficiency with HfO2 interfacial layers grown by ALD is considered among the highest reported for Gr/Si SBSC using pristine graphene.",

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author = "Aaesha Alnuaimi and Ibraheem Almansouri and Irfan Saadat and Ammar Nayfeh",

note = "Funding Information: The authors would like to acknowledge the valuable advice and constructive comments of Prof. Jing Kong and Yi-Song (from Massachusetts Institute of Technology ) in graphene transfer as well as the fabrication of Gr/Si SBSC. This work is fully supported by Masdar Institute (a part of Khalifa University of Science and Technology) . Funding Information: The authors would like to acknowledge the valuable advice and constructive comments of Prof. Jing Kong and Yi-Song (from Massachusetts Institute of Technology) in graphene transfer as well as the fabrication of Gr/Si SBSC. This work is fully supported by Masdar Institute (a part of Khalifa University of Science and Technology). Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

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AU - Saadat, Irfan

AU - Nayfeh, Ammar

N1 - Funding Information: The authors would like to acknowledge the valuable advice and constructive comments of Prof. Jing Kong and Yi-Song (from Massachusetts Institute of Technology ) in graphene transfer as well as the fabrication of Gr/Si SBSC. This work is fully supported by Masdar Institute (a part of Khalifa University of Science and Technology) . Funding Information: The authors would like to acknowledge the valuable advice and constructive comments of Prof. Jing Kong and Yi-Song (from Massachusetts Institute of Technology) in graphene transfer as well as the fabrication of Gr/Si SBSC. This work is fully supported by Masdar Institute (a part of Khalifa University of Science and Technology). Publisher Copyright: © 2018 Elsevier Ltd

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N2 - Among the limiting factors that affect the performance of Graphene (Gr)/ Silicon (Si) Schottky barrier solar cells (SBSC) - are the high recombination at Gr/Si interface and the growth of undesirable native oxide that resulted in instability issue. In this work, hafnium oxide (HfO2) grown by atomic layer deposition (ALD) has been investigated as an interfacial layer for Gr/Si Schottky junction solar cells. Engineering the interface with HfO2 contributed to enhancing the power conversion efficiency remarkably from 3.9% to 9.1%. The obtained efficiency with HfO2 interfacial layers grown by ALD is considered among the highest reported for Gr/Si SBSC using pristine graphene.

AB - Among the limiting factors that affect the performance of Graphene (Gr)/ Silicon (Si) Schottky barrier solar cells (SBSC) - are the high recombination at Gr/Si interface and the growth of undesirable native oxide that resulted in instability issue. In this work, hafnium oxide (HfO2) grown by atomic layer deposition (ALD) has been investigated as an interfacial layer for Gr/Si Schottky junction solar cells. Engineering the interface with HfO2 contributed to enhancing the power conversion efficiency remarkably from 3.9% to 9.1%. The obtained efficiency with HfO2 interfacial layers grown by ALD is considered among the highest reported for Gr/Si SBSC using pristine graphene.

KW - Graphene

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KW - Interface

KW - Solar cell

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