High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

Ayman Rezk; Irfan Saadat

doi:10.1109/LED.2019.2890831

High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

Ayman Rezk
, Irfan Saadat

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report a CMOS compatible high-performance ALD Al-doped ZnO thin-film transistor (TFT) fabricated on flexible substrate with a sub-150 °C processing temperature. The TFTs channel are optimized through Al doping (2-3 at.%) using all low-temperature steps to enable flexible substrate processing while minimizing the piezoelectric effect in the channel. The optimized device has an electron mobility as high as 30 cm ² /Vs in comparison to earlier reported values of 0.1-0.7 cm ² /Vs for ZnO TFTs while maintaining desired threshold voltages of 1-2 V and I ON/I OFF ratios of 10 ⁷ -10 ⁹ .

Original language	British English
Article number	8600339
Pages (from-to)	240-242
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	40
Issue number	2
DOIs	https://doi.org/10.1109/LED.2019.2890831
State	Published - Feb 2019

Keywords

Atomic layer deposition
doped zinc oxide
flexible structures
piezoelectric films
thin film transistors
zinc oxide

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title = "High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates",

abstract = " We report a CMOS compatible high-performance ALD Al-doped ZnO thin-film transistor (TFT) fabricated on flexible substrate with a sub-150 °C processing temperature. The TFTs channel are optimized through Al doping (2-3 at.\%) using all low-temperature steps to enable flexible substrate processing while minimizing the piezoelectric effect in the channel. The optimized device has an electron mobility as high as 30 cm 2 /Vs in comparison to earlier reported values of 0.1-0.7 cm 2 /Vs for ZnO TFTs while maintaining desired threshold voltages of 1-2 V and I ON/I OFF ratios of 10 7 -10 9 .",

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AB - We report a CMOS compatible high-performance ALD Al-doped ZnO thin-film transistor (TFT) fabricated on flexible substrate with a sub-150 °C processing temperature. The TFTs channel are optimized through Al doping (2-3 at.%) using all low-temperature steps to enable flexible substrate processing while minimizing the piezoelectric effect in the channel. The optimized device has an electron mobility as high as 30 cm 2 /Vs in comparison to earlier reported values of 0.1-0.7 cm 2 /Vs for ZnO TFTs while maintaining desired threshold voltages of 1-2 V and I ON/I OFF ratios of 10 7 -10 9 .

KW - Atomic layer deposition

KW - doped zinc oxide

KW - flexible structures

KW - piezoelectric films

KW - thin film transistors

KW - zinc oxide

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High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

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