@inproceedings{a924f47d859c4b9ea1bc9d5cdd8ade17,
title = "High performance 4H - SiC emitter coupled logic circuits",
abstract = "The increasing demand for electronic devices and circuits dedicated to harsh environment applications, specifically high temperature and high power applications, has called for more research dedicated towards silicon carbide (SiC) devices and integrated circuits (ICs). SiC, a wide bandgap semiconductor, is inherently capable of operation in such environments. SiC bipolar transistors are essential for such applications since bipolar devices, unlike MOSFETs, do not have any oxide layer under high electric field, and hence are not prone to reliability issues at high temperatures. In this paper, the design of optimized emitter coupled logic technology circuits using 4H-SiC bipolar transistors is presented. These circuits work over a wide range of temperatures and power supply voltages at high speeds, demonstrating the potential of robust high speed ECL integrated circuits in SiC.",
keywords = "emitter-coupled logic, high temperature, High-temperature integrated circuits (ICs), integrated circuits (ECL), silicon carbide (SiC), smart power",
author = "Shakti Singh and Sayed, \{Nourhan El\} and Hazem Elgabra and Tamador Elboshra and Maisam Wahbah and Zaabi, \{Mariam Al\}",
year = "2013",
doi = "10.1109/ICECS.2013.6815511",
language = "British English",
isbn = "9781479924523",
series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "703--706",
booktitle = "2013 IEEE 20th International Conference on Electronics, Circuits, and Systems, ICECS 2013",
address = "United States",
note = "2013 IEEE 20th International Conference on Electronics, Circuits, and Systems, ICECS 2013 ; Conference date: 08-12-2013 Through 11-12-2013",
}