High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

Ali K. Okyay; M. Cengiz Onbasli; Burcu Ercan; Hyun Yong Yu; Shen Ren; David A.B. Miller; Krishna C. Saraswat; Ammar M. Nayfeh

doi:10.1109/LEOS.2009.5343246

High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

Ali K. Okyay
, M. Cengiz Onbasli
, Burcu Ercan
, Hyun Yong Yu
, Shen Ren
, David A.B. Miller
, Krishna C. Saraswat
, Ammar M. Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm² are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV.

Original language	British English
Title of host publication	2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09
Pages	303-304
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2009.5343246
State	Published - 2009
Event	2009 IEEE LEOS Annual Meeting Conference, LEOS '09 - Belek-Antalya, Turkey Duration: 4 Oct 2009 → 8 Oct 2009

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)	1092-8081

Conference

Conference	2009 IEEE LEOS Annual Meeting Conference, LEOS '09
Country/Territory	Turkey
City	Belek-Antalya
Period	4/10/09 → 8/10/09

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10.1109/LEOS.2009.5343246

Cite this

Okyay, A. K., Onbasli, M. C., Ercan, B., Yu, H. Y., Ren, S., Miller, D. A. B., Saraswat, K. C., & Nayfeh, A. M. (2009). High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared. In 2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09 (pp. 303-304). Article 5343246 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2009.5343246

@inproceedings{55066db461034146a670d4c45e732a74,

title = "High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared",

abstract = "Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68\% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV.",

author = "Okyay, \{Ali K.\} and Onbasli, \{M. Cengiz\} and Burcu Ercan and Yu, \{Hyun Yong\} and Shen Ren and Miller, \{David A.B.\} and Saraswat, \{Krishna C.\} and Nayfeh, \{Ammar M.\}",

year = "2009",

doi = "10.1109/LEOS.2009.5343246",

language = "British English",

isbn = "9781424436804",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

pages = "303--304",

booktitle = "2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09",

note = "2009 IEEE LEOS Annual Meeting Conference, LEOS '09 ; Conference date: 04-10-2009 Through 08-10-2009",

}

Okyay, AK, Onbasli, MC, Ercan, B, Yu, HY, Ren, S, Miller, DAB, Saraswat, KC & Nayfeh, AM 2009, High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared. in 2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09., 5343246, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, pp. 303-304, 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, 4/10/09. https://doi.org/10.1109/LEOS.2009.5343246

High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared. / Okyay, Ali K.; Onbasli, M. Cengiz; Ercan, Burcu et al.
2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09. 2009. p. 303-304 5343246 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

AU - Okyay, Ali K.

AU - Onbasli, M. Cengiz

AU - Ercan, Burcu

AU - Yu, Hyun Yong

AU - Ren, Shen

AU - Miller, David A.B.

AU - Saraswat, Krishna C.

AU - Nayfeh, Ammar M.

PY - 2009

Y1 - 2009

N2 - Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV.

AB - Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV.

UR - https://www.scopus.com/pages/publications/72549092654

U2 - 10.1109/LEOS.2009.5343246

DO - 10.1109/LEOS.2009.5343246

M3 - Conference contribution

AN - SCOPUS:72549092654

SN - 9781424436804

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SP - 303

EP - 304

BT - 2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09

T2 - 2009 IEEE LEOS Annual Meeting Conference, LEOS '09

Y2 - 4 October 2009 through 8 October 2009

ER -

High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

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