High collection efficiency CVD diamond alpha detectors

P. Bergonzo, F. Foulon, R. D. Marshall, C. Jany, A. Brambilla, R. D. McKeag, R. B. Jackman

    Research output: Contribution to conferencePaperpeer-review


    Advances in chemical vapour deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its extreme physical properties. A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties. We report the optimization of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimizing the device geometry, we show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used.

    Original languageBritish English
    Number of pages4
    StatePublished - 1997
    EventProceedings of the 1997 IEEE Nuclear Science Symposium - Albuquerque, NM, USA
    Duration: 9 Nov 199715 Nov 1997


    ConferenceProceedings of the 1997 IEEE Nuclear Science Symposium
    CityAlbuquerque, NM, USA


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