Health State Estimation and Remaining Useful Life Prediction of Power Devices Subject to Noisy and Aperiodic Condition Monitoring

Shuai Zhao, Yingzhou Peng, Fei Yang, Enes Ugur, Bilal Akin, Huai Wang

    Research output: Contribution to journalArticlepeer-review

    29 Scopus citations

    Abstract

    Condition monitoring of power devices is highly critical for safety and mission-critical power electronics systems. Typically, these systems are subjected to noise in harsh operational environment contaminating the degradation measurements. In dynamic applications, the system duty cycle may not be periodic and results in aperiodic degradation measurements. Both these factors negatively affect the health assessment performance. In order to address these challenges, this article proposes a health state estimation and remaining useful life prediction method for power devices in the presence of noisy and aperiodic degradation measurements. For this purpose, three-source uncertainties in the degradation modeling, including the temporal uncertainty, measurement uncertainty, and device-to-device heterogeneity, are formulated in a Gamma state-space model to ensure health assessment accuracy. In order to learn the device degradation behavior, a model parameter estimation method is developed based on a stochastic expectation-maximization algorithm. The accuracy and robustness of the proposed method are verified by numerical analysis under various noise levels. Finally, the findings are justified using SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) accelerated aging test data.

    Original languageBritish English
    Article number9335597
    Pages (from-to)1-16
    Number of pages16
    JournalIEEE Transactions on Instrumentation and Measurement
    Volume70
    DOIs
    StatePublished - 2021

    Keywords

    • Degradation modeling
    • gamma process
    • noisy and aperiodic measurements
    • particle filter (PF)
    • remaining useful life (RUL) prediction
    • SiC metal-oxide-semiconductor field-effect transistors (MOSFETs)

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