Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

M. H. Xie, S. H. Cheung, L. X. Zheng, S. Y. Tong, B. S. Zhang, H. Yang

Research output: Contribution to journalArticlepeer-review

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Abstract

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence processes than that of the flat film.

Original languageBritish English
Pages (from-to)165-172
Number of pages8
JournalInternational Journal of Modern Physics B
Volume16
Issue number1-2
DOIs
StatePublished - 20 Jan 2002

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