Abstract
Here reports the different epitaxial selectivity of GaAs and Al0.4Ga0.6As grown by MOCVD on (100) and (111) plane at substrate temperature of 650°C. Such substrate temperature of 650°C is lower than that reported previously, and is more benefit for fabricating GaAs/AlGaAs quantum wells (QWs) epitaxial layers of optoelectronic devices. With this approach, GaAs/Al0.4Ga0.6As QWs are grown on GaAs nonplanar substrates. Measurements of transmission electron micrograph, low temperature photoluminescence and photo-reflectivity excited by polarized light are applied to study the samples. The result not only demonstrates the unique epitaxial selectivity of GaAs and Al0.4Ga0.6As grown by MOCVD at 650°C, and also shows formation of quantum wires at the bottoms of V-grooves on the nonplanar substrates.
| Original language | British English |
|---|---|
| Pages (from-to) | 289-294 |
| Number of pages | 6 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 15 |
| Issue number | 4 |
| State | Published - Apr 1994 |