Growth and interface properties of InAlGaAs/GaAs quantum wells

Lianxi Zheng, Xiongwei Hu, Qin Han

Research output: Contribution to journalArticlepeer-review


The InAlGaAs/GaAs quantum wells (QWs) with InAlGaAs layers as barriers are grown by low pressure metal organic chemical vapor deposition (LP-MOCVD). The study of growth reveals that high quality InAlGaAs/GaAs QWs can be obtained under proper growth interruption. The interface properties are also studied by using X-ray diffraction and low temperature PL.

Original languageBritish English
Pages (from-to)265-269
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Issue number3
StatePublished - Mar 1999


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