Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV

Timothy Milakovich; Rushabh Shah; Sabina Hadi; Mayank Bulsara; Ammar Nayfeh; Eugene Fitzgerald

doi:10.1109/PVSC.2015.7355598

Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV

Timothy Milakovich
, Rushabh Shah
, Sabina Hadi
, Mayank Bulsara
, Ammar Nayfeh
, Eugene Fitzgerald

Electrical Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

We investigate the growth, microstructure and device characteristics of 1.71eV bandgap GaAs0.76P0.24 solar cells grown on Si substrates using SiyGe1-y graded buffers. Our optimized growth conditions suppress defect nucleation at the GaAsP/SiGe heterointerface and enable the demonstration of single junction solar cells with a threading dislocation density of 3.4×106 cm-2, a 3× reduction compared to reported GaAsxP1-x cells grown on Si. The solar cells have high open-circuit voltages (Voc) of 1.22 V, bandgap-voltage offset (Woc) of 0.48 V (representing a 45 mV reduction over prior art). The short-circuit current density (jSC) is 11 mA/cm2 and the fill factor (FF) 82%, under AM1.5G irradiance without an anti-reflection coating (ARC). Integration of an ARC would push these GaAs0.77P0.23 single junction solar cells to >15% efficiency, making them well suited to cascade with a Si solar cell for high efficiency tandem solar cells.

Original language	British English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355598
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

GaAsP
III-V on silicon
metamorphic materials
Silicon germanium multi-junction photovoltaic cells

Access to Document

10.1109/PVSC.2015.7355598

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Milakovich, T., Shah, R., Hadi, S., Bulsara, M., Nayfeh, A., & Fitzgerald, E. (2015). Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7355598 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355598

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title = "Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV",

abstract = "We investigate the growth, microstructure and device characteristics of 1.71eV bandgap GaAs0.76P0.24 solar cells grown on Si substrates using SiyGe1-y graded buffers. Our optimized growth conditions suppress defect nucleation at the GaAsP/SiGe heterointerface and enable the demonstration of single junction solar cells with a threading dislocation density of 3.4×106 cm-2, a 3× reduction compared to reported GaAsxP1-x cells grown on Si. The solar cells have high open-circuit voltages (Voc) of 1.22 V, bandgap-voltage offset (Woc) of 0.48 V (representing a 45 mV reduction over prior art). The short-circuit current density (jSC) is 11 mA/cm2 and the fill factor (FF) 82\%, under AM1.5G irradiance without an anti-reflection coating (ARC). Integration of an ARC would push these GaAs0.77P0.23 single junction solar cells to >15\% efficiency, making them well suited to cascade with a Si solar cell for high efficiency tandem solar cells.",

keywords = "GaAsP, III-V on silicon, metamorphic materials, Silicon germanium multi-junction photovoltaic cells",

author = "Timothy Milakovich and Rushabh Shah and Sabina Hadi and Mayank Bulsara and Ammar Nayfeh and Eugene Fitzgerald",

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Milakovich, T, Shah, R, Hadi, S, Bulsara, M, Nayfeh, A & Fitzgerald, E 2015, Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355598, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7355598

Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV. / Milakovich, Timothy; Shah, Rushabh; Hadi, Sabina et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355598 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV

AU - Milakovich, Timothy

AU - Shah, Rushabh

AU - Hadi, Sabina

AU - Bulsara, Mayank

AU - Nayfeh, Ammar

AU - Fitzgerald, Eugene

PY - 2015/12/14

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N2 - We investigate the growth, microstructure and device characteristics of 1.71eV bandgap GaAs0.76P0.24 solar cells grown on Si substrates using SiyGe1-y graded buffers. Our optimized growth conditions suppress defect nucleation at the GaAsP/SiGe heterointerface and enable the demonstration of single junction solar cells with a threading dislocation density of 3.4×106 cm-2, a 3× reduction compared to reported GaAsxP1-x cells grown on Si. The solar cells have high open-circuit voltages (Voc) of 1.22 V, bandgap-voltage offset (Woc) of 0.48 V (representing a 45 mV reduction over prior art). The short-circuit current density (jSC) is 11 mA/cm2 and the fill factor (FF) 82%, under AM1.5G irradiance without an anti-reflection coating (ARC). Integration of an ARC would push these GaAs0.77P0.23 single junction solar cells to >15% efficiency, making them well suited to cascade with a Si solar cell for high efficiency tandem solar cells.

AB - We investigate the growth, microstructure and device characteristics of 1.71eV bandgap GaAs0.76P0.24 solar cells grown on Si substrates using SiyGe1-y graded buffers. Our optimized growth conditions suppress defect nucleation at the GaAsP/SiGe heterointerface and enable the demonstration of single junction solar cells with a threading dislocation density of 3.4×106 cm-2, a 3× reduction compared to reported GaAsxP1-x cells grown on Si. The solar cells have high open-circuit voltages (Voc) of 1.22 V, bandgap-voltage offset (Woc) of 0.48 V (representing a 45 mV reduction over prior art). The short-circuit current density (jSC) is 11 mA/cm2 and the fill factor (FF) 82%, under AM1.5G irradiance without an anti-reflection coating (ARC). Integration of an ARC would push these GaAs0.77P0.23 single junction solar cells to >15% efficiency, making them well suited to cascade with a Si solar cell for high efficiency tandem solar cells.

KW - GaAsP

KW - III-V on silicon

KW - metamorphic materials

KW - Silicon germanium multi-junction photovoltaic cells

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DO - 10.1109/PVSC.2015.7355598

M3 - Conference contribution

AN - SCOPUS:84961673935

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Milakovich T, Shah R, Hadi S, Bulsara M, Nayfeh A, Fitzgerald E. Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355598. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7355598

Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV

Abstract

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Conference

UN SDGs

Keywords

Access to Document

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