@inproceedings{424f5d89447f4c84be06fea4e8251a90,
title = "Growth and characterization of GaAsP top cells for high efficiency III-V/Si tandem PV",
abstract = "We investigate the growth, microstructure and device characteristics of 1.71eV bandgap GaAs0.76P0.24 solar cells grown on Si substrates using SiyGe1-y graded buffers. Our optimized growth conditions suppress defect nucleation at the GaAsP/SiGe heterointerface and enable the demonstration of single junction solar cells with a threading dislocation density of 3.4×106 cm-2, a 3× reduction compared to reported GaAsxP1-x cells grown on Si. The solar cells have high open-circuit voltages (Voc) of 1.22 V, bandgap-voltage offset (Woc) of 0.48 V (representing a 45 mV reduction over prior art). The short-circuit current density (jSC) is 11 mA/cm2 and the fill factor (FF) 82%, under AM1.5G irradiance without an anti-reflection coating (ARC). Integration of an ARC would push these GaAs0.77P0.23 single junction solar cells to >15% efficiency, making them well suited to cascade with a Si solar cell for high efficiency tandem solar cells.",
keywords = "GaAsP, III-V on silicon, metamorphic materials, Silicon germanium multi-junction photovoltaic cells",
author = "Timothy Milakovich and Rushabh Shah and Sabina Hadi and Mayank Bulsara and Ammar Nayfeh and Eugene Fitzgerald",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7355598",
language = "British English",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
address = "United States",
}
