Graphene by one-step chemical vapor deposition from ferrocene vapors: Properties and electrochemical evaluation

George Pilatos, Anna V. Perdikaki, Andreas Sapalidis, George S. Pappas, Tatiana Giannakopoulou, Dimitra Tsoutsou, Evangelia Xenogiannopoulou, Nikos Boukos, Athanasios Dimoulas, Christos Trapalis, Nick K. Kanellopoulos, Georgios N. Karanikolos

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Growth of few-layer graphene using ferrocene as precursor by chemical vapor deposition is reported. The growth did not involve any additional carbon or catalyst source or external hydrocarbon gases. Parametric investigation was performed using different conditions, namely, varying growth temperature from 600 to1000 °C, and growth duration from 5 min to 3 h, as well as using fast quenching or gradual cooling after the thermal treatment, in order to examine the effect on the quality of the produced graphene. The growth took place on silicon wafers and resulted, under optimal conditions, in formation of graphene with 2-3 layers and high graphitic quality, as evidenced by Raman spectroscopy, with characteristic full width at half maximum of the 2D band of 49.46 cm-1, and I2D/IG and ID/IG intensity ratios of 1.15 and 0.26, respectively. Atomic force microscopy and X-ray photoelectron spectroscopy were employed to further evaluate graphene characteristics and enlighten growth mechanism. Electrochemical evaluation of the developed material was performed using cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge-discharge measurements.

Original languageBritish English
Article number064303
JournalJournal of Applied Physics
Issue number6
StatePublished - 14 Feb 2016


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