TY - JOUR
T1 - GLAD Fabricated Self-Powered Photodetector Based on WO3with SiO2as Interfacial Layer
AU - Alam, Mir Waqas
AU - Meitei, Ph Nonglen
AU - Aldughaylibi, Fatimah Saeed
AU - Baqais, Amal
AU - Waheed-Ur-Rehman, Mir
AU - Ali, Mohamad Akbar
AU - Maghanga, Christopher M.
N1 - Publisher Copyright:
© 2023 Mir Waqas Alam et al.
PY - 2023
Y1 - 2023
N2 - Photodetectors based on one-dimensional structures have recently attracted great interest due to their high surface-to-volume ratio and light-trapping efficiency. In this study, a self-powered photodetector based on vertically aligned WO3 nanorod with SiO2 as an interfacial layer has been fabricated using glancing angle deposition. Scanning electron microscope (SEM) analysis confirms the successful growth of WO3 nanorod and SiO2 thin film with a thickness of 125 nm and 70 nm, respectively. The device's optical properties were also analysed using UV-visible spectroscopy, which revealed a wide bandgap and an intense absorption peak in the ultraviolet region. The electrical analysis showed a nonlinear rectifying current-voltage behaviour with high photosensitivity. Additionally, the photodetector exhibits a fast response of 0.31 s rise time and 0.32 s fall time at 0 V. Moreover, the devices possess a high detectivity and a responsivity of 0.68 mA/W. Thus, the obtained finding reveals a potential candidate for self-powered photodetector application.
AB - Photodetectors based on one-dimensional structures have recently attracted great interest due to their high surface-to-volume ratio and light-trapping efficiency. In this study, a self-powered photodetector based on vertically aligned WO3 nanorod with SiO2 as an interfacial layer has been fabricated using glancing angle deposition. Scanning electron microscope (SEM) analysis confirms the successful growth of WO3 nanorod and SiO2 thin film with a thickness of 125 nm and 70 nm, respectively. The device's optical properties were also analysed using UV-visible spectroscopy, which revealed a wide bandgap and an intense absorption peak in the ultraviolet region. The electrical analysis showed a nonlinear rectifying current-voltage behaviour with high photosensitivity. Additionally, the photodetector exhibits a fast response of 0.31 s rise time and 0.32 s fall time at 0 V. Moreover, the devices possess a high detectivity and a responsivity of 0.68 mA/W. Thus, the obtained finding reveals a potential candidate for self-powered photodetector application.
UR - https://www.scopus.com/pages/publications/85176258406
U2 - 10.1155/2023/6659621
DO - 10.1155/2023/6659621
M3 - Article
AN - SCOPUS:85176258406
SN - 0363-907X
VL - 2023
JO - International Journal of Energy Research
JF - International Journal of Energy Research
M1 - 6659621
ER -