Giant Rashba spin splitting in Bi2Se3: Tl

N. Singh, Y. Saeed, U. Schwingenschlögl

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3 Scopus citations

Abstract

First-principles calculations are employed to demonstrate a giant Rashba spin splitting in Bi2Se3:Tl. Biaxial tensile and compressive strain is used to tune the splitting by modifying the potential gradient. The band gap is found to increase under compression and decreases under tension, whereas the dependence of the Rashba spin splitting on the strain is the opposite. Large values of αR = 1.57 eV Å at the bottom of the conduction band (electrons) and αR = 3.34 eV Å at the top of the valence band (holes) are obtained without strain. These values can be further enhanced to αR = 1.83 eV Å and αR = 3.64 eV Å, respectively, by 2% tensile strain.

Original languageBritish English
Pages (from-to)849-852
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number10
DOIs
StatePublished - 1 Oct 2014

Keywords

  • Band structures
  • BiSe:Tl
  • First-principles calculations
  • Rashba spin splitting
  • Semiconductors
  • Tensile strain

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