@inproceedings{2e0a889a75b647fe97222e751311de36,
title = "Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD",
abstract = "This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500° C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.",
author = "Ghada Dushaq and Ammar Nayfeh and Mahmoud Rasras",
note = "Publisher Copyright: {\textcopyright} OSA 2017.; Frontiers in Optics, FiO 2017 ; Conference date: 18-09-2017 Through 21-09-2017",
year = "2017",
doi = "10.1364/FIO.2017.JW4A.42",
language = "British English",
series = "Optics InfoBase Conference Papers",
booktitle = "Frontiers in Optics, FiO 2017",
}