Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

Ali K. Okyay; Ammar M. Nayfeh; Krishna C. Saraswat; Ann Marshall; Paul C. McIntyre; Takao Yonehara

doi:10.1109/CLEO.2006.4628294

Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

Ali K. Okyay
, Ammar M. Nayfeh
, Krishna C. Saraswat
, Ann Marshall
, Paul C. McIntyre
, Takao Yonehara

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm² and external quantum efficiency up to 68%.

Original language	British English
Title of host publication	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs	https://doi.org/10.1109/CLEO.2006.4628294
State	Published - 2006
Event	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States Duration: 21 May 2006 → 26 May 2006

Publication series

Name	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Conference

Conference	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/Territory	United States
City	Long Beach, CA
Period	21/05/06 → 26/05/06

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10.1109/CLEO.2006.4628294

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Okyay, A. K., Nayfeh, A. M., Saraswat, K. C., Marshall, A., McIntyre, P. C., & Yonehara, T. (2006). Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 Article 4628294 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4628294

Okyay, Ali K. ; Nayfeh, Ammar M. ; Saraswat, Krishna C. et al. / Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

@inproceedings{91a6aa12f8db4659aaf4a7604bc9d91b,

title = "Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection",

abstract = "We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68\%.",

author = "Okyay, \{Ali K.\} and Nayfeh, \{Ammar M.\} and Saraswat, \{Krishna C.\} and Ann Marshall and McIntyre, \{Paul C.\} and Takao Yonehara",

year = "2006",

doi = "10.1109/CLEO.2006.4628294",

language = "British English",

isbn = "1557528136",

series = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

booktitle = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

note = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",

}

Okyay, AK, Nayfeh, AM, Saraswat, KC, Marshall, A, McIntyre, PC & Yonehara, T 2006, Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. in Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006., 4628294, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Long Beach, CA, United States, 21/05/06. https://doi.org/10.1109/CLEO.2006.4628294

Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. / Okyay, Ali K.; Nayfeh, Ammar M.; Saraswat, Krishna C. et al.
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628294 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

AU - Okyay, Ali K.

AU - Nayfeh, Ammar M.

AU - Saraswat, Krishna C.

AU - Marshall, Ann

AU - McIntyre, Paul C.

AU - Yonehara, Takao

PY - 2006

Y1 - 2006

N2 - We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68%.

AB - We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68%.

UR - https://www.scopus.com/pages/publications/55649114913

U2 - 10.1109/CLEO.2006.4628294

DO - 10.1109/CLEO.2006.4628294

M3 - Conference contribution

AN - SCOPUS:55649114913

SN - 1557528136

SN - 9781557528131

T3 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

BT - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

T2 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Y2 - 21 May 2006 through 26 May 2006

ER -

Okyay AK, Nayfeh AM, Saraswat KC, Marshall A, McIntyre PC, Yonehara T. Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628294. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). doi: 10.1109/CLEO.2006.4628294

Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

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