Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

Ali K. Okyay; Ammar M. Nayfeh; Krishna C. Saraswat; Ann Marshall; Paul C. McIntyre; Takao Yonehara

doi:10.1109/CLEO.2006.4628294

Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Ann Marshall, Paul C. McIntyre, Takao Yonehara

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm² and external quantum efficiency up to 68%.

Original language	British English
Title of host publication	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs	https://doi.org/10.1109/CLEO.2006.4628294
State	Published - 2006
Event	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States Duration: 21 May 2006 → 26 May 2006

Publication series

Name	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Conference

Conference	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/Territory	United States
City	Long Beach, CA
Period	21/05/06 → 26/05/06

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10.1109/CLEO.2006.4628294

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Okyay, A. K., Nayfeh, A. M., Saraswat, K. C., Marshall, A., McIntyre, P. C., & Yonehara, T. (2006). Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 Article 4628294 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4628294

Okyay, Ali K. ; Nayfeh, Ammar M. ; Saraswat, Krishna C. et al. / Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

@inproceedings{91a6aa12f8db4659aaf4a7604bc9d91b,

title = "Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection",

abstract = "We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68%.",

author = "Okyay, {Ali K.} and Nayfeh, {Ammar M.} and Saraswat, {Krishna C.} and Ann Marshall and McIntyre, {Paul C.} and Takao Yonehara",

year = "2006",

doi = "10.1109/CLEO.2006.4628294",

language = "British English",

isbn = "1557528136",

series = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

booktitle = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",

note = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",

}

Okyay, AK, Nayfeh, AM, Saraswat, KC, Marshall, A, McIntyre, PC & Yonehara, T 2006, Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. in Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006., 4628294, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Long Beach, CA, United States, 21/05/06. https://doi.org/10.1109/CLEO.2006.4628294

Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. / Okyay, Ali K.; Nayfeh, Ammar M.; Saraswat, Krishna C. et al.
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628294 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

AU - Okyay, Ali K.

AU - Nayfeh, Ammar M.

AU - Saraswat, Krishna C.

AU - Marshall, Ann

AU - McIntyre, Paul C.

AU - Yonehara, Takao

PY - 2006

Y1 - 2006

N2 - We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68%.

AB - We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55 m and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68%.

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U2 - 10.1109/CLEO.2006.4628294

DO - 10.1109/CLEO.2006.4628294

M3 - Conference contribution

AN - SCOPUS:55649114913

SN - 1557528136

SN - 9781557528131

T3 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

BT - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

T2 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Y2 - 21 May 2006 through 26 May 2006

ER -

Okyay AK, Nayfeh AM, Saraswat KC, Marshall A, McIntyre PC, Yonehara T. Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628294. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). doi: 10.1109/CLEO.2006.4628294

Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

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