GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
- I. A. Ajia
- , Y. Yamashita
- , K. Lorenz
- , M. M. Muhammed
- , L. Spasevski
- , D. Almalawi
- , J. Xu
- , K. Iizuka
- , Y. Morishima
- , D. H. Anjum
- , N. Wei
- , R. W. Martin
- , A. Kuramata
- , I. S. Roqan
Research output: Contribution to journal › Article › peer-review
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