GaN nanowires synthesized by electroless etching method

  • A. Najar
  • , A. B. Slimane
  • , D. H. Anjum
  • , T. K. Ng
  • , B. S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Original languageBritish English
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2012
StatePublished - 2012
EventQuantum Electronics and Laser Science Conference, QELS 2012 - San Jose, CA, United States
Duration: 6 May 201211 May 2012

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2012
Country/TerritoryUnited States
CitySan Jose, CA
Period6/05/1211/05/12

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