Gain mechanisms and lasing in II-VI compounds

M. F. Pereira, K. Henneberger

Research output: Contribution to journalArticlepeer-review

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In this paper, we present a microscopic theory for the physical mechanisms giving rise to lasing in II-VI semiconductor media. Both photons and carriers are consistently treated within the same fully quantum mechanical footing by means of nonequilibriuin Keldysh Green's function techniques. The highly excited medium is described in terms of a strongly Coulomb correlated electron-hole plasma. Numerical results are presented for the emission, absorption and gain characteristics of ZnCdSe-ZnSSe MQWs in good agreement with recent experimental results.

Original languageBritish English
Pages (from-to)751-762
Number of pages12
JournalPhysica Status Solidi (B) Basic Research
Issue number2
StatePublished - Aug 1997


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