Gain mechanisms and lasing in II-VI compounds

M. F. Pereira; K. Henneberger

doi:10.1002/1521-3951(199708)202:2<751::aid-pssb751>3.0.co;2-o

Gain mechanisms and lasing in II-VI compounds

M. F. Pereira, K. Henneberger

Physics

Universität Rostock

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

In this paper, we present a microscopic theory for the physical mechanisms giving rise to lasing in II-VI semiconductor media. Both photons and carriers are consistently treated within the same fully quantum mechanical footing by means of nonequilibriuin Keldysh Green's function techniques. The highly excited medium is described in terms of a strongly Coulomb correlated electron-hole plasma. Numerical results are presented for the emission, absorption and gain characteristics of ZnCdSe-ZnSSe MQWs in good agreement with recent experimental results.

Original language	British English
Pages (from-to)	751-762
Number of pages	12
Journal	Physica Status Solidi (B) Basic Research
Volume	202
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(199708)202:2<751::aid-pssb751>3.0.co;2-o
State	Published - Aug 1997

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AB - In this paper, we present a microscopic theory for the physical mechanisms giving rise to lasing in II-VI semiconductor media. Both photons and carriers are consistently treated within the same fully quantum mechanical footing by means of nonequilibriuin Keldysh Green's function techniques. The highly excited medium is described in terms of a strongly Coulomb correlated electron-hole plasma. Numerical results are presented for the emission, absorption and gain characteristics of ZnCdSe-ZnSSe MQWs in good agreement with recent experimental results.

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Gain mechanisms and lasing in II-VI compounds

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