TY - JOUR
T1 - Gain characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers
AU - Michler, P.
AU - Pereira, M. F.
AU - Homburg, O.
AU - Nerger, L.
AU - Gutowski, J.
AU - Wenisch, H.
AU - Hommel, D.
PY - 1999
Y1 - 1999
N2 - A systematic investigation of the gain dependence on temperature, well width (3, 5, 7 nm), and excitation intensity in MBE grown ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers has been performed. At low lattice temperature (100 K) we find a rather low threshold density of 30 kW/cm2. We observe an exponential increase of the threshold density with increasing temperature for the 5 and 7 nm samples and an even stronger increase for the 3 nm sample. The characteristic temperatures (T0) are 105 and 118 K for the 5 and 7 nm samples, respectively. The low T0 values are mainly attributed to thermionic emission of carriers out of the quantum well due to the small total band offset of 156 meV between the strained ZnSe layer and the (Zn,Mg)(S,Se) barriers. At high temperatures and carrier densities contributions from higher subbands can clearly be seen in the gain spectra. The experimental results are in good agreement with calculations in the framework of a microscopic theory which includes the detailed coupled band structure and many-particle effects.
AB - A systematic investigation of the gain dependence on temperature, well width (3, 5, 7 nm), and excitation intensity in MBE grown ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers has been performed. At low lattice temperature (100 K) we find a rather low threshold density of 30 kW/cm2. We observe an exponential increase of the threshold density with increasing temperature for the 5 and 7 nm samples and an even stronger increase for the 3 nm sample. The characteristic temperatures (T0) are 105 and 118 K for the 5 and 7 nm samples, respectively. The low T0 values are mainly attributed to thermionic emission of carriers out of the quantum well due to the small total band offset of 156 meV between the strained ZnSe layer and the (Zn,Mg)(S,Se) barriers. At high temperatures and carrier densities contributions from higher subbands can clearly be seen in the gain spectra. The experimental results are in good agreement with calculations in the framework of a microscopic theory which includes the detailed coupled band structure and many-particle effects.
UR - http://www.scopus.com/inward/record.url?scp=0032664718&partnerID=8YFLogxK
U2 - 10.1117/12.356867
DO - 10.1117/12.356867
M3 - Conference article
AN - SCOPUS:0032664718
SN - 0277-786X
VL - 3625
SP - 117
EP - 126
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
T2 - Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII
Y2 - 25 January 1999 through 29 January 1999
ER -