Gain characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers

P. Michler, M. F. Pereira, O. Homburg, L. Nerger, J. Gutowski, H. Wenisch, D. Hommel

Research output: Contribution to journalConference articlepeer-review


A systematic investigation of the gain dependence on temperature, well width (3, 5, 7 nm), and excitation intensity in MBE grown ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum-well lasers has been performed. At low lattice temperature (100 K) we find a rather low threshold density of 30 kW/cm2. We observe an exponential increase of the threshold density with increasing temperature for the 5 and 7 nm samples and an even stronger increase for the 3 nm sample. The characteristic temperatures (T0) are 105 and 118 K for the 5 and 7 nm samples, respectively. The low T0 values are mainly attributed to thermionic emission of carriers out of the quantum well due to the small total band offset of 156 meV between the strained ZnSe layer and the (Zn,Mg)(S,Se) barriers. At high temperatures and carrier densities contributions from higher subbands can clearly be seen in the gain spectra. The experimental results are in good agreement with calculations in the framework of a microscopic theory which includes the detailed coupled band structure and many-particle effects.

Original languageBritish English
Pages (from-to)117-126
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1999
EventProceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA
Duration: 25 Jan 199929 Jan 1999


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