Ga-doped ZnO as an electron transport layer for PffBT4T-2OD: PC70BM organic solar cells

Ramakant Sharma; Hyunwoo Lee; Kunal Borse; Vinay Gupta; Amish G. Joshi; Seunghyup Yoo; Dipti Gupta

doi:10.1016/j.orgel.2017.01.028

Ga-doped ZnO as an electron transport layer for PffBT4T-2OD: PC₇₀BM organic solar cells

Ramakant Sharma, Hyunwoo Lee, Kunal Borse, Vinay Gupta, Amish G. Joshi, Seunghyup Yoo, Dipti Gupta

Physics

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Ga-doped ZnO(GZO) is investigated as an electron transport layer in organic solar cells based on a promising donor: acceptor system of poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3‴-di(2-octyldode-cyl)-2,2'; 5',2″; -5″,2‴-quaterthio-phen-5,5‴-diyl)] (PffBT4T-2OD):phenyl-C71-butyric acid methyl ester (PC₇₀BM). With the inverted geometry having a configuration of ITO/GZO (40 nm)/PffBT4T-2OD:PC₇₀BM (270 nm)/MoO₃ (20 nm)/Al (100 nm), maximum power conversion efficiency (PCE) of 9.74% has been achieved, while it is limited at 8.72% for devices with undoped ZnO. Our study based on the structural, morphological, compositional, and electrical characterizations indicate that suggests enhanced device performance of the GZO-based devices resulted mainly from the improved electrical properties of Ga-ZnO thin films as compared to undoped ZnO.

Original language	British English
Pages (from-to)	207-213
Number of pages	7
Journal	Organic Electronics
Volume	43
DOIs	https://doi.org/10.1016/j.orgel.2017.01.028
State	Published - 1 Apr 2017

Keywords

Electron transport layers
Ga-doped ZnO
Hole blocking layer
Organic solar cells
PffBT4T-2OD:PCBM

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.orgel.2017.01.028

Cite this

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title = "Ga-doped ZnO as an electron transport layer for PffBT4T-2OD: PC70BM organic solar cells",

abstract = "Ga-doped ZnO(GZO) is investigated as an electron transport layer in organic solar cells based on a promising donor: acceptor system of poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3‴-di(2-octyldode-cyl)-2,2'; 5',2″; -5″,2‴-quaterthio-phen-5,5‴-diyl)] (PffBT4T-2OD):phenyl-C71-butyric acid methyl ester (PC70BM). With the inverted geometry having a configuration of ITO/GZO (40 nm)/PffBT4T-2OD:PC70BM (270 nm)/MoO3 (20 nm)/Al (100 nm), maximum power conversion efficiency (PCE) of 9.74% has been achieved, while it is limited at 8.72% for devices with undoped ZnO. Our study based on the structural, morphological, compositional, and electrical characterizations indicate that suggests enhanced device performance of the GZO-based devices resulted mainly from the improved electrical properties of Ga-ZnO thin films as compared to undoped ZnO.",

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author = "Ramakant Sharma and Hyunwoo Lee and Kunal Borse and Vinay Gupta and Joshi, {Amish G.} and Seunghyup Yoo and Dipti Gupta",

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AU - Sharma, Ramakant

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AU - Borse, Kunal

AU - Gupta, Vinay

AU - Joshi, Amish G.

AU - Yoo, Seunghyup

AU - Gupta, Dipti

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