Ga-doped ZnO as an electron transport layer for PffBT4T-2OD: PC70BM organic solar cells

Ramakant Sharma, Hyunwoo Lee, Kunal Borse, Vinay Gupta, Amish G. Joshi, Seunghyup Yoo, Dipti Gupta

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Ga-doped ZnO(GZO) is investigated as an electron transport layer in organic solar cells based on a promising donor: acceptor system of poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3‴-di(2-octyldode-cyl)-2,2'; 5',2″; -5″,2‴-quaterthio-phen-5,5‴-diyl)] (PffBT4T-2OD):phenyl-C71-butyric acid methyl ester (PC70BM). With the inverted geometry having a configuration of ITO/GZO (40 nm)/PffBT4T-2OD:PC70BM (270 nm)/MoO3 (20 nm)/Al (100 nm), maximum power conversion efficiency (PCE) of 9.74% has been achieved, while it is limited at 8.72% for devices with undoped ZnO. Our study based on the structural, morphological, compositional, and electrical characterizations indicate that suggests enhanced device performance of the GZO-based devices resulted mainly from the improved electrical properties of Ga-ZnO thin films as compared to undoped ZnO.

Original languageBritish English
Pages (from-to)207-213
Number of pages7
JournalOrganic Electronics
Volume43
DOIs
StatePublished - 1 Apr 2017

Keywords

  • Electron transport layers
  • Ga-doped ZnO
  • Hole blocking layer
  • Organic solar cells
  • PffBT4T-2OD:PCBM

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