@inproceedings{98677424a7bc4e53bd116596a68b5a56,
title = "Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes",
abstract = "In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.",
keywords = "indium molybdenum oxide, sputtering, thin film transistors, zinc oxide",
author = "Mateusz Madzik and Elangovan Elamurugu and Jaime Viegas",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Advances in Display Technologies VI ; Conference date: 18-02-2016",
year = "2016",
doi = "10.1117/12.2213850",
language = "British English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Wu, \{Ming Hsien\} and Sin-Doo Lee and Liang-Chy Chien",
booktitle = "Advances in Display Technologies VI",
address = "United States",
}