First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Mohammed A. Majid; Ahmad A. Al-Jabr; Rami T. Elafandy; Hassan M. Oubei; Mohd S. Alias; Bayan A. Alnahhas; Dalaver H. Anjum; Tien Khee Ng; Mohamed Shehata; Boon S. Ooi

doi:10.1117/12.2202768

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

Mohammed A. Majid
, Ahmad A. Al-Jabr
, Rami T. Elafandy
, Hassan M. Oubei
, Mohd S. Alias
, Bayan A. Alnahhas
, Dalaver H. Anjum
, Tien Khee Ng
, Mohamed Shehata
, Boon S. Ooi

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ∼46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ∼4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.

Original language	British English
Title of host publication	Novel In-Plane Semiconductor Lasers XV
Editors	Alexey A. Belyanin, Peter M. Smowton
Publisher	SPIE
ISBN (Electronic)	9781510600027
DOIs	https://doi.org/10.1117/12.2202768
State	Published - 2016
Event	Novel In-Plane Semiconductor Lasers XV - San Francisco, United States Duration: 15 Feb 2016 → 18 Feb 2016

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9767
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Novel In-Plane Semiconductor Lasers XV
Country/Territory	United States
City	San Francisco
Period	15/02/16 → 18/02/16

Keywords

Cycle annealing
InGaP/InAlGaP
Lasers
Orange & yellow emitters
Quantum well intermixing
Strain

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10.1117/12.2202768

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Majid, M. A., Al-Jabr, A. A., Elafandy, R. T., Oubei, H. M., Alias, M. S., Alnahhas, B. A., Anjum, D. H., Ng, T. K., Shehata, M., & Ooi, B. S. (2016). First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. In A. A. Belyanin, & P. M. Smowton (Eds.), Novel In-Plane Semiconductor Lasers XV Article 97670A (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9767). SPIE. https://doi.org/10.1117/12.2202768

Majid, Mohammed A. ; Al-Jabr, Ahmad A. ; Elafandy, Rami T. et al. / First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. Novel In-Plane Semiconductor Lasers XV. editor / Alexey A. Belyanin ; Peter M. Smowton. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{6320728ea8d54e73a83faa638bb242cd,

title = "First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique",

abstract = "In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ∼46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ∼4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.",

keywords = "Cycle annealing, InGaP/InAlGaP, Lasers, Orange \& yellow emitters, Quantum well intermixing, Strain",

author = "Majid, \{Mohammed A.\} and Al-Jabr, \{Ahmad A.\} and Elafandy, \{Rami T.\} and Oubei, \{Hassan M.\} and Alias, \{Mohd S.\} and Alnahhas, \{Bayan A.\} and Anjum, \{Dalaver H.\} and Ng, \{Tien Khee\} and Mohamed Shehata and Ooi, \{Boon S.\}",

note = "Funding Information: The authors gratefully acknowledge the financial support from KAUST baseline funding, Competitive Research Grant (CRG), and KACST Technology Innovation Center for Solid State Lighting at KAUST. Publisher Copyright: {\textcopyright} 2016 SPIE.; Novel In-Plane Semiconductor Lasers XV ; Conference date: 15-02-2016 Through 18-02-2016",

year = "2016",

doi = "10.1117/12.2202768",

language = "British English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Belyanin, \{Alexey A.\} and Smowton, \{Peter M.\}",

booktitle = "Novel In-Plane Semiconductor Lasers XV",

address = "United States",

}

Majid, MA, Al-Jabr, AA, Elafandy, RT, Oubei, HM, Alias, MS, Alnahhas, BA, Anjum, DH, Ng, TK, Shehata, M & Ooi, BS 2016, First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. in AA Belyanin & PM Smowton (eds), Novel In-Plane Semiconductor Lasers XV., 97670A, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9767, SPIE, Novel In-Plane Semiconductor Lasers XV, San Francisco, United States, 15/02/16. https://doi.org/10.1117/12.2202768

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. / Majid, Mohammed A.; Al-Jabr, Ahmad A.; Elafandy, Rami T. et al.
Novel In-Plane Semiconductor Lasers XV. ed. / Alexey A. Belyanin; Peter M. Smowton. SPIE, 2016. 97670A (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9767).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

AU - Majid, Mohammed A.

AU - Al-Jabr, Ahmad A.

AU - Elafandy, Rami T.

AU - Oubei, Hassan M.

AU - Alias, Mohd S.

AU - Alnahhas, Bayan A.

AU - Anjum, Dalaver H.

AU - Ng, Tien Khee

AU - Shehata, Mohamed

AU - Ooi, Boon S.

N1 - Funding Information: The authors gratefully acknowledge the financial support from KAUST baseline funding, Competitive Research Grant (CRG), and KACST Technology Innovation Center for Solid State Lighting at KAUST. Publisher Copyright: © 2016 SPIE.

PY - 2016

Y1 - 2016

N2 - In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ∼46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ∼4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.

AB - In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ∼46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ∼4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.

KW - Cycle annealing

KW - InGaP/InAlGaP

KW - Lasers

KW - Orange & yellow emitters

KW - Quantum well intermixing

KW - Strain

UR - https://www.scopus.com/pages/publications/84978498935

U2 - 10.1117/12.2202768

DO - 10.1117/12.2202768

M3 - Conference contribution

AN - SCOPUS:84978498935

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Novel In-Plane Semiconductor Lasers XV

A2 - Belyanin, Alexey A.

A2 - Smowton, Peter M.

PB - SPIE

T2 - Novel In-Plane Semiconductor Lasers XV

Y2 - 15 February 2016 through 18 February 2016

ER -

Majid MA, Al-Jabr AA, Elafandy RT, Oubei HM, Alias MS, Alnahhas BA et al. First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique. In Belyanin AA, Smowton PM, editors, Novel In-Plane Semiconductor Lasers XV. SPIE. 2016. 97670A. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2202768

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

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Keywords

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